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IXTX110N20L2-VB Product details

Product introduction:

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IXTX110N20L2-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its drain-source voltage (VDS) reaches 200V and the maximum drain current (ID) is 96A, suitable for high-power power supply and switching applications. The on-resistance of this MOSFET (RDS(ON) is 21mΩ@VGS=10V) ensures low power consumption and high efficiency, suitable for various power management solutions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 200V 4V 96A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 200V 4V 96A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 200V 4V 96A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
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- **Package:** TO247
- **Configuration:** Single N-channel
- **VDS:** 200V
- **VGS:** ±20V
- **Threshold voltage (Vth):** 4V
- **On-resistance (RDS(ON)):** 21mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** 96A
- **Technology:** Trench

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Domain and module applications:

Example: **
IXTX110N20L2-VB is widely used in high-voltage power supply, DC-DC converter and motor control. Its strong current handling capability makes it an ideal choice for industrial automation, renewable energy systems (such as solar inverters) and electric vehicle charging systems, ensuring stable and efficient operation under high load and harsh environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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