IXTX110N20L2-VB Product details
Product introduction:
IXTX110N20L2-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its drain-source voltage (VDS) reaches 200V and the maximum drain current (ID) is 96A, suitable for high-power power supply and switching applications. The on-resistance of this MOSFET (RDS(ON) is 21mΩ@VGS=10V) ensures low power consumption and high efficiency, suitable for various power management solutions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package:** TO247
- **Configuration:** Single N-channel
- **VDS:** 200V
- **VGS:** ±20V
- **Threshold voltage (Vth):** 4V
- **On-resistance (RDS(ON)):** 21mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** 96A
- **Technology:** Trench
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Domain and module applications:
IXTX110N20L2-VB is widely used in high-voltage power supply, DC-DC converter and motor control. Its strong current handling capability makes it an ideal choice for industrial automation, renewable energy systems (such as solar inverters) and electric vehicle charging systems, ensuring stable and efficient operation under high load and harsh environment.
Technical support:
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