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IXTU5N50P-VB Product details
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Product Introduction
IXTU5N50P-VB is a high voltage N-channel MOSFET in TO251 package, designed for high reliability and low conduction loss applications. With a drain-source voltage (VDS) of up to 650V and a maximum continuous current of 5A, it is suitable for use in environments requiring high voltage and stable performance.
IXTU5N50P-VB is a high voltage N-channel MOSFET in TO251 package, designed for high reliability and low conduction loss applications. With a drain-source voltage (VDS) of up to 650V and a maximum continuous current of 5A, it is suitable for use in environments requiring high voltage and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IXTU5N50P-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTU5N50P-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
The IXTU5N50P-VB is suitable for a variety of applications, including:
1. **High-voltage power supply**: In switching power supplies, it supports high voltage input and ensures stable output, suitable for industrial and commercial power management.
2. **Electric vehicles**: It can be used in power conversion modules of electric vehicles to help manage the energy transfer of high-voltage batteries and improve energy efficiency.
3. **Lighting control**: In LED drive circuits, it is used as a switching element to improve the energy efficiency and control accuracy of lighting systems.
4. **Renewable energy**: In solar inverters, it is used for efficient energy conversion to help achieve efficient use of renewable energy.
The IXTU5N50P-VB is suitable for a variety of applications, including:
1. **High-voltage power supply**: In switching power supplies, it supports high voltage input and ensures stable output, suitable for industrial and commercial power management.
2. **Electric vehicles**: It can be used in power conversion modules of electric vehicles to help manage the energy transfer of high-voltage batteries and improve energy efficiency.
3. **Lighting control**: In LED drive circuits, it is used as a switching element to improve the energy efficiency and control accuracy of lighting systems.
4. **Renewable energy**: In solar inverters, it is used for efficient energy conversion to help achieve efficient use of renewable energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
