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IXTU2N80P-VB Product details
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Product Introduction
The IXTU2N80P-VB is a high voltage N-channel MOSFET in a TO251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) reaches 800V, making it suitable for use in harsh environments. The on-resistance (RDS(ON)) of this MOSFET is 2600mΩ@VGS=10V, which is relatively high but suitable for low current applications. Its stable switching performance makes it suitable for a variety of power supplies and power management systems.
The IXTU2N80P-VB is a high voltage N-channel MOSFET in a TO251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) reaches 800V, making it suitable for use in harsh environments. The on-resistance (RDS(ON)) of this MOSFET is 2600mΩ@VGS=10V, which is relatively high but suitable for low current applications. Its stable switching performance makes it suitable for a variety of power supplies and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS**: 800V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2600mΩ @ VGS=10V
- **ID**: 2A
- **Technology**: SJ_Multi-EPI
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS**: 800V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2600mΩ @ VGS=10V
- **ID**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
IXTU2N80P-VB is widely used in high-voltage power converters, switching power supplies, and lighting control modules. For example, in high-voltage power converters, it can effectively control voltage and current to achieve efficient power management. In switching power supplies, this MOSFET can provide reliable switching characteristics and is suitable for low-current high-voltage applications. In addition, it is also suitable for industrial lighting control systems to ensure safe and stable power output.
IXTU2N80P-VB is widely used in high-voltage power converters, switching power supplies, and lighting control modules. For example, in high-voltage power converters, it can effectively control voltage and current to achieve efficient power management. In switching power supplies, this MOSFET can provide reliable switching characteristics and is suitable for low-current high-voltage applications. In addition, it is also suitable for industrial lighting control systems to ensure safe and stable power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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