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IXTU02N50D-VB Product details
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IXTU02N50D-VB Product Introduction
The IXTU02N50D-VB is a high voltage N-channel MOSFET in TO251 package, designed for high voltage applications. With a drain-source voltage (VDS) of 650V, the device is suitable for handling high voltage situations in power electronics. Its gate-source voltage (VGS) can reach ±30V and the threshold voltage (Vth) is 3.5V. Although its on-resistance (RDS(ON) = 4300mΩ @ VGS=10V) is relatively high, it can still perform well in low power and high voltage applications, especially where stability and reliability are required.
The IXTU02N50D-VB is a high voltage N-channel MOSFET in TO251 package, designed for high voltage applications. With a drain-source voltage (VDS) of 650V, the device is suitable for handling high voltage situations in power electronics. Its gate-source voltage (VGS) can reach ±30V and the threshold voltage (Vth) is 3.5V. Although its on-resistance (RDS(ON) = 4300mΩ @ VGS=10V) is relatively high, it can still perform well in low power and high voltage applications, especially where stability and reliability are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IXTU02N50D-VB
- **Package**: TO251
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 2A
- **Technology**: Plannar
- **Model**: IXTU02N50D-VB
- **Package**: TO251
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply**: IXTU02N50D-VB is suitable for high-voltage switching power supply, and can effectively handle high voltage of 650V, thus meeting various power conversion requirements.
2. **Motor drive application**: In motor control systems that require high-voltage drive, this MOSFET can be used as a switching device to ensure stable operation of the motor.
3. **Power converter**: It can be used for DC-DC converters and inverters, which can handle high voltage input and output stable voltage. It is widely used in renewable energy equipment such as solar inverters.
4. **Industrial control system**: IXTU02N50D-VB can be used as a switching device in industrial automation and control systems, suitable for the control and switching of high-voltage loads.
5. **Lighting control**: In high-voltage LED lighting applications, this MOSFET can be used as a driver to ensure high efficiency and long life to meet high-brightness lighting requirements.
The above is the product introduction of IXTU02N50D-VB, detailed parameter description and examples of its applicable fields. If you need more information or specific application cases, please feel free to let us know!
1. **High-voltage switching power supply**: IXTU02N50D-VB is suitable for high-voltage switching power supply, and can effectively handle high voltage of 650V, thus meeting various power conversion requirements.
2. **Motor drive application**: In motor control systems that require high-voltage drive, this MOSFET can be used as a switching device to ensure stable operation of the motor.
3. **Power converter**: It can be used for DC-DC converters and inverters, which can handle high voltage input and output stable voltage. It is widely used in renewable energy equipment such as solar inverters.
4. **Industrial control system**: IXTU02N50D-VB can be used as a switching device in industrial automation and control systems, suitable for the control and switching of high-voltage loads.
5. **Lighting control**: In high-voltage LED lighting applications, this MOSFET can be used as a driver to ensure high efficiency and long life to meet high-brightness lighting requirements.
The above is the product introduction of IXTU02N50D-VB, detailed parameter description and examples of its applicable fields. If you need more information or specific application cases, please feel free to let us know!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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