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IXTR200N10P-VB Product details
Back to previous pageProduct introduction：
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The IXTR200N10P-VB is a high-performance single N-channel MOSFET in a TO247 package with excellent conductivity and reliability. Its high drain-source voltage (VDS) of 100V and maximum drain current (ID) of 150A make it ideal for high-power applications. The MOSFET's on-resistance (RDS(ON) of 6mΩ@VGS=10V) significantly reduces power dissipation and heat generation, thereby improving overall system efficiency.
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The IXTR200N10P-VB is a high-performance single N-channel MOSFET in a TO247 package with excellent conductivity and reliability. Its high drain-source voltage (VDS) of 100V and maximum drain current (ID) of 150A make it ideal for high-power applications. The MOSFET's on-resistance (RDS(ON) of 6mΩ@VGS=10V) significantly reduces power dissipation and heat generation, thereby improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
：**
- **Package:** TO247
- **Configuration:** Single N-channel
- **VDS:** 100V
- **VGS:** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 6mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** 150A
- **Technology:** Trench
**
- **Package:** TO247
- **Configuration:** Single N-channel
- **VDS:** 100V
- **VGS:** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 6mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** 150A
- **Technology:** Trench
**
Domain and module applications：
Example: **
The IXTR200N10P-VB is widely used in high-efficiency power supplies, DC-DC converters, and motor drives. Its excellent current handling capability makes it suitable for use in power management modules for electric vehicles, renewable energy systems, and high-performance computing devices, ensuring stability and efficient operation under high load conditions.
The IXTR200N10P-VB is widely used in high-efficiency power supplies, DC-DC converters, and motor drives. Its excellent current handling capability makes it suitable for use in power management modules for electric vehicles, renewable energy systems, and high-performance computing devices, ensuring stability and efficient operation under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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