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IXTQ82N25P-VB Product details

Product introduction:

Product Introduction
IXTQ36N50P-VB is a high-performance N-channel MOSFET in TO3P package for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 600V and has an excellent on-resistance (RDS(ON)) of 60mΩ@VGS=10V, making it excellent in efficiency and thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 250V 3.5V 60A 40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 250V 3.5V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 250V 3.5V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 60mΩ @ VGS=10V
- **ID**: 47A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules: This MOSFET is widely used in high-voltage power converters, motor drives, and power management systems. For example, in power modules, it can be used in DC-DC converters to ensure high efficiency and low power consumption. In motor drive applications, the IXTQ36N50P-VB provides excellent switching performance and is suitable for high-load drives. In addition, it can also effectively control high-voltage output in power management systems to ensure system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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