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IXTQ64N25P-VB Product details

Product introduction:

Product Introduction
IXTQ64N25P-VB is a high-performance N-channel MOSFET with 250V VDS and 20V VGS in TO3P package. With its low on-resistance (RDS(ON) of 40mΩ@VGS=10V) and high current handling capability (ID of 60A), the device is very suitable for high-efficiency switching and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 250V 3.5V 60A 40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 250V 3.5V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 250V 3.5V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Parameter description
- **Model**: IXTQ64N25P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 250V
- **VGS**: ±20V
- **Vth**: 3.5V
- **RDS(ON)**: 40mΩ @ VGS=10V
- **ID**: 60A
- **Technology**: Trench

Domain and module applications:

Applications and modules: IXTQ64N25P-VB is widely used in modules such as switching power supplies, DC-DC converters and inverters. It is particularly important in electric vehicles, renewable energy systems (such as solar and wind inverters) and industrial automation, and can effectively handle high voltage and high current, providing efficient power conversion and control capabilities for the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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