IXTQ52N30P-VB Product details
Product introduction:
IXTQ52N30P-VB is a high voltage N-channel MOSFET in TO3P package with excellent thermal performance and high efficiency for high voltage applications. Based on SJ_Multi-EPI technology, the device can operate at voltages up to 600V and is suitable for a variety of industrial and consumer electronics products.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 60mΩ (@VGS=10V)
- **ID**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
Technical support:
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