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IXTQ52N30P-VB Product details

Product introduction:

Product Introduction
IXTQ52N30P-VB is a high voltage N-channel MOSFET in TO3P package with excellent thermal performance and high efficiency for high voltage applications. Based on SJ_Multi-EPI technology, the device can operate at voltages up to 600V and is suitable for a variety of industrial and consumer electronics products.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 47A 60mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 60mΩ (@VGS=10V)
- **ID**: 47A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules: IXTQ52N30P-VB is suitable for high voltage applications such as power converters, inverters and drive circuits. In addition, it also performs well in automotive electronics, renewable energy systems (such as solar inverters) and industrial control equipment, which can effectively improve the energy efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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