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IXTQ44N50P-VB Product details
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Product Introduction
IXTQ44N50P-VB is a high voltage N-channel MOSFET in TO3P package, suitable for high-efficiency switching and power conversion applications. It has a drain-source voltage (VDS) of 600V, a maximum continuous current of 47A, and provides excellent conduction characteristics, suitable for use in applications requiring high reliability and low conduction loss.
IXTQ44N50P-VB is a high voltage N-channel MOSFET in TO3P package, suitable for high-efficiency switching and power conversion applications. It has a drain-source voltage (VDS) of 600V, a maximum continuous current of 47A, and provides excellent conduction characteristics, suitable for use in applications requiring high reliability and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXTQ44N50P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTQ44N50P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
IXTQ44N50P-VB is suitable for multiple applications, including:
1. **Power management**: In switching power supplies, it can be used for high-efficiency DC-DC converters to ensure efficient energy transmission.
2. **Electric vehicles**: In electric vehicle drive systems, it provides high-voltage drive capabilities to optimize battery management and energy conversion.
3. **Industrial control**: In industrial automation equipment, it is used for motor drives and high-power control systems to ensure reliability and stability.
4. **Renewable energy**: In solar inverters, it optimizes energy conversion and improves system efficiency.
IXTQ44N50P-VB is suitable for multiple applications, including:
1. **Power management**: In switching power supplies, it can be used for high-efficiency DC-DC converters to ensure efficient energy transmission.
2. **Electric vehicles**: In electric vehicle drive systems, it provides high-voltage drive capabilities to optimize battery management and energy conversion.
3. **Industrial control**: In industrial automation equipment, it is used for motor drives and high-power control systems to ensure reliability and stability.
4. **Renewable energy**: In solar inverters, it optimizes energy conversion and improves system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
