IXTQ42N25P-VB Product details
Product introduction:
IXTQ42N25P-VB is a high-performance N-type MOSFET in TO3P package with high VDS and ID specifications, suitable for use in high voltage and high current applications. The device uses Trench technology to provide excellent conduction performance with low RDS(ON) value, ensuring high efficiency and thermal management.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 200V
- **VGS**: ±20V
- **Vth**: 3V
- **RDS(ON)**: 48mΩ (VGS=10V)
- **ID**: 60A
- **Technology**: Trench
Domain and module applications:
Technical support:
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