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IXTQ42N25P-VB Product details

Product introduction:

Product Introduction
IXTQ42N25P-VB is a high-performance N-type MOSFET in TO3P package with high VDS and ID specifications, suitable for use in high voltage and high current applications. The device uses Trench technology to provide excellent conduction performance with low RDS(ON) value, ensuring high efficiency and thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 200V 3V 60A 48mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 200V 3V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 200V 3V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 200V
- **VGS**: ±20V
- **Vth**: 3V
- **RDS(ON)**: 48mΩ (VGS=10V)
- **ID**: 60A
- **Technology**: Trench

Domain and module applications:

Applications and module examples: IXTQ42N25P-VB is widely used in power management modules such as switching power supplies and DC-DC converters, and can efficiently handle high currents and high voltages. In addition, it is also suitable for electric vehicle drive systems and industrial automation equipment to ensure stable power transmission and efficient thermal management. In communication equipment, it can provide efficient switching performance and improve overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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