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IXTQ36N30P-VB Product details

Product introduction:

IXTQ36N30P-VB Product Introduction
IXTQ36N30P-VB is a high-performance single N-channel MOSFET in TO3P package, suitable for high voltage applications. Its rated VDS is 600V and supports VGS of ±30V, ensuring its reliability and stability in high voltage environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 47A 60mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 60mΩ @ VGS=10V
- **ID**: 47A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules: IXTQ36N30P-VB is commonly used in power converters, DC-DC converters, and electric vehicle drive systems. Its high withstand voltage makes it very suitable for switching power supplies and high-frequency inverters, which can effectively improve energy conversion efficiency and system reliability. In addition, it is suitable for industrial automation equipment and renewable energy systems, such as solar inverters, to ensure stable operation in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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