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IXTQ30N60P-VB Product details
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IXTQ30N60P-VB Product Introduction
IXTQ30N60P-VB is a high-performance N-channel MOSFET packaged in TO3P, suitable for high voltage and high current applications. With a drain-source voltage (VDS) of 600V, this device can withstand higher operating voltages and is suitable for use in demanding power electronics and power management systems. Its gate-source voltage (VGS) range is ±30V, and it has strong driving capabilities. Using SJ_Multi-EPI technology, it provides lower on-resistance (RDS(ON) = 190mΩ@VGS=10V), which reduces power consumption in high current applications, thereby improving the overall efficiency of the system.
IXTQ30N60P-VB is a high-performance N-channel MOSFET packaged in TO3P, suitable for high voltage and high current applications. With a drain-source voltage (VDS) of 600V, this device can withstand higher operating voltages and is suitable for use in demanding power electronics and power management systems. Its gate-source voltage (VGS) range is ±30V, and it has strong driving capabilities. Using SJ_Multi-EPI technology, it provides lower on-resistance (RDS(ON) = 190mΩ@VGS=10V), which reduces power consumption in high current applications, thereby improving the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXTQ30N60P-VB
- **Package**: TO3P
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTQ30N60P-VB
- **Package**: TO3P
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
1. **Switching Power Supply (SMPS)**: The IXTQ30N60P-VB can be used as the main switch in a switching power supply, capable of effectively handling high voltages and currents, ensuring high efficiency and reliability.
2. **Motor Driver**: In motor control applications, this MOSFET can be used as part of an H-bridge circuit, providing fast switching and low power consumption, thereby improving the efficiency of the motor drive.
3. **Power Converter**: Suitable for DC-DC converters or inverters, the IXTQ30N60P-VB is able to handle high voltage inputs and provide stable outputs, making it suitable for solar inverters and other renewable energy applications.
4. **Industrial Control**: In industrial automation and control systems, this MOSFET can be used to drive high voltage loads, providing stable power management and efficient signal switching.
5. **LED Driver**: In LED lighting applications, it can be used as a driver to ensure efficient operation and long life of LED modules.
The above is the product introduction of IXTQ30N60P-VB, detailed parameter description and examples of its applicable fields. If you need more information or specific application cases, please feel free to let us know!
1. **Switching Power Supply (SMPS)**: The IXTQ30N60P-VB can be used as the main switch in a switching power supply, capable of effectively handling high voltages and currents, ensuring high efficiency and reliability.
2. **Motor Driver**: In motor control applications, this MOSFET can be used as part of an H-bridge circuit, providing fast switching and low power consumption, thereby improving the efficiency of the motor drive.
3. **Power Converter**: Suitable for DC-DC converters or inverters, the IXTQ30N60P-VB is able to handle high voltage inputs and provide stable outputs, making it suitable for solar inverters and other renewable energy applications.
4. **Industrial Control**: In industrial automation and control systems, this MOSFET can be used to drive high voltage loads, providing stable power management and efficient signal switching.
5. **LED Driver**: In LED lighting applications, it can be used as a driver to ensure efficient operation and long life of LED modules.
The above is the product introduction of IXTQ30N60P-VB, detailed parameter description and examples of its applicable fields. If you need more information or specific application cases, please feel free to let us know!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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