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IXTQ30N50P-VB Product details

Product introduction:

Product Introduction
IXTQ30N50P-VB is a high voltage N-channel MOSFET with 600V VDS and 30V VGS in TO3P package, suitable for high-performance and high-voltage applications. Its low on-resistance (RDS(ON) is 190mΩ@VGS=10V) makes it excellent in power management and conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 20A 190mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Parameter description
- **Model**: IXTQ30N50P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 190mΩ @ VGS=10V
- **ID**: 20A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules: This MOSFET is widely used in power converters, inverters, and high-voltage switching power supply modules. It performs particularly well in electric vehicle charging stations, solar inverters, and industrial power management, and can handle high voltages and high currents to ensure efficient operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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