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IXTQ26N50P-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXTQ26N50P-VB is a high-efficiency N-channel MOSFET in TO3P package, designed for 600V high voltage applications. The device can handle drain current (ID) up to 20A, and its gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring that it can turn on quickly under various operating conditions. The on-resistance (RDS(ON)) of IXTQ26N50P-VB is 190mΩ at VGS=10V, which can effectively reduce power consumption and improve system efficiency. It is suitable for a variety of power management and switching applications.
IXTQ26N50P-VB is a high-efficiency N-channel MOSFET in TO3P package, designed for 600V high voltage applications. The device can handle drain current (ID) up to 20A, and its gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring that it can turn on quickly under various operating conditions. The on-resistance (RDS(ON)) of IXTQ26N50P-VB is 190mΩ at VGS=10V, which can effectively reduce power consumption and improve system efficiency. It is suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. Detailed parameter description:
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 190mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 190mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples:
1. **High-voltage power management**:
IXTQ26N50P-VB is very suitable for switching power supplies and DC-DC converters. It can provide stable power solutions under high voltage conditions and is suitable for industrial and commercial applications to help reduce energy loss and improve conversion efficiency.
2. **Electric vehicle drive**:
This MOSFET can be used in the motor drive system of electric vehicles to support high current and high voltage working conditions, ensure the efficient and reliable operation of the motor, and improve the overall performance of electric vehicles.
3. **Industrial automation**:
In industrial automation and robotics, IXTQ26N50P-VB can be used in motor control and drive modules to provide precise current control to ensure the stability and efficiency of the equipment under various loads.
4. **Inverters and Power Conversion Equipment**:
The device is suitable for inverters and other power conversion applications, capable of handling high voltage power flows, especially in renewable energy systems (such as solar and wind inverters), ensuring the efficiency and stability of the equipment.
Through these examples, the IXTQ26N50P-VB demonstrates its wide applicability in high voltage applications, especially in power management and electric vehicle drives.
1. **High-voltage power management**:
IXTQ26N50P-VB is very suitable for switching power supplies and DC-DC converters. It can provide stable power solutions under high voltage conditions and is suitable for industrial and commercial applications to help reduce energy loss and improve conversion efficiency.
2. **Electric vehicle drive**:
This MOSFET can be used in the motor drive system of electric vehicles to support high current and high voltage working conditions, ensure the efficient and reliable operation of the motor, and improve the overall performance of electric vehicles.
3. **Industrial automation**:
In industrial automation and robotics, IXTQ26N50P-VB can be used in motor control and drive modules to provide precise current control to ensure the stability and efficiency of the equipment under various loads.
4. **Inverters and Power Conversion Equipment**:
The device is suitable for inverters and other power conversion applications, capable of handling high voltage power flows, especially in renewable energy systems (such as solar and wind inverters), ensuring the efficiency and stability of the equipment.
Through these examples, the IXTQ26N50P-VB demonstrates its wide applicability in high voltage applications, especially in power management and electric vehicle drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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