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IXTQ24N55Q-VB Product details
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IXTQ24N55Q-VB Product Introduction
IXTQ24N55Q-VB is a high-performance N-type MOSFET in TO3P package, designed for high-voltage applications. With a drain-source voltage (VDS) of up to 600V and a maximum drain current (ID) of 20A, it is suitable for various power conversion and management systems. The device adopts SJ_Multi-EPI technology, has a low on-resistance (190mΩ@VGS=10V), provides excellent thermal performance and efficiency under high voltage conditions, and ensures stability under various working conditions.
IXTQ24N55Q-VB is a high-performance N-type MOSFET in TO3P package, designed for high-voltage applications. With a drain-source voltage (VDS) of up to 600V and a maximum drain current (ID) of 20A, it is suitable for various power conversion and management systems. The device adopts SJ_Multi-EPI technology, has a low on-resistance (190mΩ@VGS=10V), provides excellent thermal performance and efficiency under high voltage conditions, and ensures stability under various working conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXTQ24N55Q-VB
- **Package**: TO3P
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTQ24N55Q-VB
- **Package**: TO3P
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: IXTQ24N55Q-VB is very suitable for high voltage switching power supply modules. It can operate efficiently under high voltage and high current conditions and is widely used in power conversion and power management.
2. **Industrial power management**: This MOSFET can be used in industrial power management systems to support stable operation under high voltage conditions and meet the power supply needs of various devices.
3. **Electric vehicle charger**: In electric vehicle charging systems, IXTQ24N55Q-VB can effectively handle high voltage and high current to ensure the safety and efficiency of the charging process.
4. **High power LED driver**: This device is suitable for high power LED driver circuits and can provide stable current output under high voltage to meet modern lighting needs.
Combining the above performance and applications, IXTQ24N55Q-VB is an ideal choice for high voltage power electronic equipment, ensuring high efficiency and reliability under extreme working conditions.
1. **Switching power supply**: IXTQ24N55Q-VB is very suitable for high voltage switching power supply modules. It can operate efficiently under high voltage and high current conditions and is widely used in power conversion and power management.
2. **Industrial power management**: This MOSFET can be used in industrial power management systems to support stable operation under high voltage conditions and meet the power supply needs of various devices.
3. **Electric vehicle charger**: In electric vehicle charging systems, IXTQ24N55Q-VB can effectively handle high voltage and high current to ensure the safety and efficiency of the charging process.
4. **High power LED driver**: This device is suitable for high power LED driver circuits and can provide stable current output under high voltage to meet modern lighting needs.
Combining the above performance and applications, IXTQ24N55Q-VB is an ideal choice for high voltage power electronic equipment, ensuring high efficiency and reliability under extreme working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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