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IXTQ23N60Q-VB Product details
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Product Introduction
**IXTQ23N60Q-VB** is a high-performance single N-channel MOSFET in a TO3P package designed for high-voltage applications. The device has a maximum drain-source voltage (VDS) of up to 600V, making it suitable for a variety of applications requiring high voltage and high reliability. The maximum drain current (ID) is 20A, enabling it to operate stably under a variety of operating conditions. Its on-resistance (RDS(ON)) is 190mΩ at a gate voltage of 10V, ensuring low energy loss during switching operations. IXTQ23N60Q-VB uses SJ_Multi-EPI technology, which has excellent switching performance and thermal management characteristics, and is very suitable for high-frequency and high-power application scenarios.
**IXTQ23N60Q-VB** is a high-performance single N-channel MOSFET in a TO3P package designed for high-voltage applications. The device has a maximum drain-source voltage (VDS) of up to 600V, making it suitable for a variety of applications requiring high voltage and high reliability. The maximum drain current (ID) is 20A, enabling it to operate stably under a variety of operating conditions. Its on-resistance (RDS(ON)) is 190mΩ at a gate voltage of 10V, ensuring low energy loss during switching operations. IXTQ23N60Q-VB uses SJ_Multi-EPI technology, which has excellent switching performance and thermal management characteristics, and is very suitable for high-frequency and high-power application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXTQ23N60Q-VB
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTQ23N60Q-VB
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Mode Power Supply (SMPS)**: The IXTQ23N60Q-VB is ideal for switch-mode power supplies that can handle high voltage and high current, improve power conversion efficiency, reduce energy loss, and meet the needs of high-power applications.
2. **Motor Drive**: In motor control applications, this MOSFET can be used in high-voltage motor drive systems to ensure stable operation under high load conditions, and is suitable for motor control in industrial and home appliances.
3. **Battery Management System (BMS)**: This device can achieve efficient charge and discharge control in battery management systems, and is suitable for high-power battery packs to ensure battery safety and performance.
4. **Inverter Applications**: The IXTQ23N60Q-VB can be widely used in solar inverters and other renewable energy systems, and can efficiently manage energy conversion to ensure system reliability and efficiency at high voltages.
5. **Industrial Power Control**: This MOSFET can be used in industrial power control systems such as power protection and load switching. It can maintain stability under high voltage and high frequency operation to ensure the safety and efficiency of equipment.
With its high voltage and high current handling capabilities, the IXTQ23N60Q-VB is an ideal choice for power management and high-efficiency switching applications.
1. **Switching Mode Power Supply (SMPS)**: The IXTQ23N60Q-VB is ideal for switch-mode power supplies that can handle high voltage and high current, improve power conversion efficiency, reduce energy loss, and meet the needs of high-power applications.
2. **Motor Drive**: In motor control applications, this MOSFET can be used in high-voltage motor drive systems to ensure stable operation under high load conditions, and is suitable for motor control in industrial and home appliances.
3. **Battery Management System (BMS)**: This device can achieve efficient charge and discharge control in battery management systems, and is suitable for high-power battery packs to ensure battery safety and performance.
4. **Inverter Applications**: The IXTQ23N60Q-VB can be widely used in solar inverters and other renewable energy systems, and can efficiently manage energy conversion to ensure system reliability and efficiency at high voltages.
5. **Industrial Power Control**: This MOSFET can be used in industrial power control systems such as power protection and load switching. It can maintain stability under high voltage and high frequency operation to ensure the safety and efficiency of equipment.
With its high voltage and high current handling capabilities, the IXTQ23N60Q-VB is an ideal choice for power management and high-efficiency switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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