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IXTQ200N06P-VB Product details
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**
IXTQ200N06P-VB is a high-performance single N-channel power MOSFET in a TO-3P package designed for high-power applications. It can withstand a drain-source voltage (VDS) of up to 60V and a drain current (ID) of up to 150A. The device has an on-resistance of 5.4mΩ@VGS = 10V and uses Trench technology to ensure excellent efficiency and low energy loss in fast switching applications. IXTQ200N06P-VB is suitable for power management, motor control and other fields.
** 2. IXTQ200N06P-VB
IXTQ200N06P-VB is a high-performance single N-channel power MOSFET in a TO-3P package designed for high-power applications. It can withstand a drain-source voltage (VDS) of up to 60V and a drain current (ID) of up to 150A. The device has an on-resistance of 5.4mΩ@VGS = 10V and uses Trench technology to ensure excellent efficiency and low energy loss in fast switching applications. IXTQ200N06P-VB is suitable for power management, motor control and other fields.
** 2. IXTQ200N06P-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | 5.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
**
- **Package type**: TO-3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5.4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Power consumption**: Up to 200W
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: Typical value is 0.5°C/W
- **Input capacitance (Ciss)**: Moderate, suitable for high-frequency switching applications
- **Gate charge (Qg)**: Low, which can increase switching speed
The design of IXTQ200N06P-VB makes it excel in a variety of high-power applications.
**Three,
- **Package type**: TO-3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5.4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Power consumption**: Up to 200W
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: Typical value is 0.5°C/W
- **Input capacitance (Ciss)**: Moderate, suitable for high-frequency switching applications
- **Gate charge (Qg)**: Low, which can increase switching speed
The design of IXTQ200N06P-VB makes it excel in a variety of high-power applications.
**Three,
Domain and module applications：
**
The characteristics of IXTQ200N06P-VB make it widely used in many fields and modules, including:
1. **Power conversion**: Suitable for DC-DC converters and AC-DC power supplies, it can achieve efficient power conversion and is suitable for industrial power supplies and server power adapters.
2. **Motor control**: In motor drives, this MOSFET can provide stable current control and is suitable for power tools, electric vehicles and industrial automation systems.
3. **Switching power supply**: As a switching element used in switching power supply modules, IXTQ200N06P-VB can reduce energy loss and improve system efficiency, and is suitable for household appliances and industrial power systems.
4. **Solar inverter**: As an inverter component in photovoltaic power generation systems, it can efficiently convert DC power into AC power and improve energy utilization.
5. **Home Appliance Application**: Suitable for control modules of efficient home appliances, such as air conditioners, refrigerators, etc., ensuring fast switching and efficient energy management.
IXTQ200N06P-VB MOSFET is an ideal choice in power electronics and power management, meeting the needs of high voltage and high current applications.
The characteristics of IXTQ200N06P-VB make it widely used in many fields and modules, including:
1. **Power conversion**: Suitable for DC-DC converters and AC-DC power supplies, it can achieve efficient power conversion and is suitable for industrial power supplies and server power adapters.
2. **Motor control**: In motor drives, this MOSFET can provide stable current control and is suitable for power tools, electric vehicles and industrial automation systems.
3. **Switching power supply**: As a switching element used in switching power supply modules, IXTQ200N06P-VB can reduce energy loss and improve system efficiency, and is suitable for household appliances and industrial power systems.
4. **Solar inverter**: As an inverter component in photovoltaic power generation systems, it can efficiently convert DC power into AC power and improve energy utilization.
5. **Home Appliance Application**: Suitable for control modules of efficient home appliances, such as air conditioners, refrigerators, etc., ensuring fast switching and efficient energy management.
IXTQ200N06P-VB MOSFET is an ideal choice in power electronics and power management, meeting the needs of high voltage and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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