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IXTQ18N60P-VB Product details
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IXTQ18N60P-VB Product Introduction
IXTQ18N60P-VB is a high-voltage single N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Its maximum drain-source voltage can reach 800V and the maximum drain current is 15A, which is suitable for high-power electronic devices and power management systems. With an on-resistance of 380mΩ (@ VGS=10V), IXTQ18N60P-VB can reduce energy loss while ensuring good thermal performance, suitable for various high-frequency switching applications. Using SJ_Multi-EPI technology, the device has good electrical characteristics and thermal stability, suitable for long-term stable operation.
IXTQ18N60P-VB is a high-voltage single N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Its maximum drain-source voltage can reach 800V and the maximum drain current is 15A, which is suitable for high-power electronic devices and power management systems. With an on-resistance of 380mΩ (@ VGS=10V), IXTQ18N60P-VB can reduce energy loss while ensuring good thermal performance, suitable for various high-frequency switching applications. Using SJ_Multi-EPI technology, the device has good electrical characteristics and thermal stability, suitable for long-term stable operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 15A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXTQ18N60P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: SJ_Multi-EPI technology
- **Model**: IXTQ18N60P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applications and Modules
1. **High-voltage Power Supply**: The IXTQ18N60P-VB is ideal for high-voltage switch-mode power supplies (SMPS), capable of providing stable current at 800V to meet modern power supply requirements.
2. **Inverter**: In solar and wind inverters, this MOSFET can efficiently control power conversion to ensure stable and reliable energy conversion from DC to AC.
3. **Industrial Control**: In industrial automation equipment, this device is used for high-voltage motor drive and control, capable of handling high voltage and current to improve equipment operating efficiency.
4. **Lighting Application**: In high-power lighting solutions, the IXTQ18N60P-VB can be used for LED driving and other high-voltage lighting systems to ensure low losses and high brightness output.
5. **Charger and Battery Management**: This MOSFET is suitable for battery management systems, providing efficient switching control to ensure safe and efficient battery charging.
With its excellent performance and wide application potential, the IXTQ18N60P-VB becomes an indispensable key component in high-voltage power supply and control systems, meeting the needs of a variety of high-power applications.
1. **High-voltage Power Supply**: The IXTQ18N60P-VB is ideal for high-voltage switch-mode power supplies (SMPS), capable of providing stable current at 800V to meet modern power supply requirements.
2. **Inverter**: In solar and wind inverters, this MOSFET can efficiently control power conversion to ensure stable and reliable energy conversion from DC to AC.
3. **Industrial Control**: In industrial automation equipment, this device is used for high-voltage motor drive and control, capable of handling high voltage and current to improve equipment operating efficiency.
4. **Lighting Application**: In high-power lighting solutions, the IXTQ18N60P-VB can be used for LED driving and other high-voltage lighting systems to ensure low losses and high brightness output.
5. **Charger and Battery Management**: This MOSFET is suitable for battery management systems, providing efficient switching control to ensure safe and efficient battery charging.
With its excellent performance and wide application potential, the IXTQ18N60P-VB becomes an indispensable key component in high-voltage power supply and control systems, meeting the needs of a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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