中文
English
IXTQ16N50P-VB Product details
Back to previous pageProduct introduction：
Product Introduction: IXTQ16N50P-VB
IXTQ16N50P-VB is a high voltage N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 600V, the drain current (ID) can reach 15A, and the on-resistance (RDS(ON)) is 280mΩ at VGS of 10V. This MOSFET adopts SJ_Multi-EPI technology, has excellent switching characteristics and high voltage withstand capability, and is very suitable for high voltage power management and industrial applications.
IXTQ16N50P-VB is a high voltage N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 600V, the drain current (ID) can reach 15A, and the on-resistance (RDS(ON)) is 280mΩ at VGS of 10V. This MOSFET adopts SJ_Multi-EPI technology, has excellent switching characteristics and high voltage withstand capability, and is very suitable for high voltage power management and industrial applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXTQ16N50P-VB
- **Package**: TO3P
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTQ16N50P-VB
- **Package**: TO3P
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converters**:
The IXTQ16N50P-VB is ideal for high-voltage DC-DC converters, especially in power supply designs that need to handle high voltages. It can effectively achieve power conversion and ensure stable operation in a 600V environment.
2. **Industrial equipment control**:
This MOSFET is widely used in industrial equipment, such as motor control and automation systems. It can drive high-voltage motors and other loads, provide reliable performance, and is suitable for power drive and control modules.
3. **Inverters**:
The IXTQ16N50P-VB performs well in photovoltaic inverters and other inverters. It can efficiently convert DC power into AC power. It is suitable for renewable energy systems and power electronic equipment to improve overall energy efficiency.
4. **Electrical protection and switching applications**:
In circuits that require high-voltage switch control, IXTQ16N50P-VB can be used as a key switching element to ensure the reliability and stability of the circuit, and is widely used in electrical control equipment and protection circuits.
Through these applications, IXTQ16N50P-VB demonstrates its excellent performance in high voltage and medium current processing, providing efficient and reliable power management solutions for various high-voltage electronic systems.
1. **High-voltage power converters**:
The IXTQ16N50P-VB is ideal for high-voltage DC-DC converters, especially in power supply designs that need to handle high voltages. It can effectively achieve power conversion and ensure stable operation in a 600V environment.
2. **Industrial equipment control**:
This MOSFET is widely used in industrial equipment, such as motor control and automation systems. It can drive high-voltage motors and other loads, provide reliable performance, and is suitable for power drive and control modules.
3. **Inverters**:
The IXTQ16N50P-VB performs well in photovoltaic inverters and other inverters. It can efficiently convert DC power into AC power. It is suitable for renewable energy systems and power electronic equipment to improve overall energy efficiency.
4. **Electrical protection and switching applications**:
In circuits that require high-voltage switch control, IXTQ16N50P-VB can be used as a key switching element to ensure the reliability and stability of the circuit, and is widely used in electrical control equipment and protection circuits.
Through these applications, IXTQ16N50P-VB demonstrates its excellent performance in high voltage and medium current processing, providing efficient and reliable power management solutions for various high-voltage electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
