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IXTQ150N06P-VB Product details
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IXTQ150N06P-VB Product Introduction
The IXTQ150N06P-VB is a high-performance N-Channel MOSFET in a TO3P package, designed for applications requiring high current and medium voltage. Its maximum drain-source voltage (VDS) is 60V, supporting a drain current (ID) of up to 150A. At a gate voltage of 10V, the on-resistance (RDS(ON)) is only 5.4mΩ, ensuring low power losses in high current applications. The IXTQ150N06P-VB uses Trench technology and has superior switching performance, making it suitable for power management and high-power applications.
The IXTQ150N06P-VB is a high-performance N-Channel MOSFET in a TO3P package, designed for applications requiring high current and medium voltage. Its maximum drain-source voltage (VDS) is 60V, supporting a drain current (ID) of up to 150A. At a gate voltage of 10V, the on-resistance (RDS(ON)) is only 5.4mΩ, ensuring low power losses in high current applications. The IXTQ150N06P-VB uses Trench technology and has superior switching performance, making it suitable for power management and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | 5.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXTQ150N06P-VB
- **Package**: TO3P
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5.4mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: IXTQ150N06P-VB
- **Package**: TO3P
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5.4mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power power management**: The IXTQ150N06P-VB is suitable for high-power switching power supply designs, including AC-DC converters and DC-DC converters, and can efficiently convert power and maintain low energy loss to improve overall energy efficiency.
2. **Motor drive**: In motor control applications, this MOSFET can provide stable current and fast switching response, suitable for industrial automation, robots and power tools to ensure efficient and reliable operation of equipment.
3. **Battery management system**: The IXTQ150N06P-VB is suitable for chargers and battery management systems, which can efficiently manage the charging and discharging process of the battery to ensure the safety and performance of the battery.
4. **Inverter**: The device can be used in solar inverters and other power conversion systems to achieve efficient DC to AC conversion and support the use of renewable energy.
5. **Automotive electronics**: In automotive electronic systems, IXTQ150N06P-VB can be used for power management and electric power steering systems, providing reliable current control in harsh environments and enhancing the overall performance and safety of the vehicle.
Through its excellent conductive properties and wide application applicability, IXTQ150N06P-VB has become an indispensable component in a variety of high-efficiency power and drive applications.
1. **High-power power management**: The IXTQ150N06P-VB is suitable for high-power switching power supply designs, including AC-DC converters and DC-DC converters, and can efficiently convert power and maintain low energy loss to improve overall energy efficiency.
2. **Motor drive**: In motor control applications, this MOSFET can provide stable current and fast switching response, suitable for industrial automation, robots and power tools to ensure efficient and reliable operation of equipment.
3. **Battery management system**: The IXTQ150N06P-VB is suitable for chargers and battery management systems, which can efficiently manage the charging and discharging process of the battery to ensure the safety and performance of the battery.
4. **Inverter**: The device can be used in solar inverters and other power conversion systems to achieve efficient DC to AC conversion and support the use of renewable energy.
5. **Automotive electronics**: In automotive electronic systems, IXTQ150N06P-VB can be used for power management and electric power steering systems, providing reliable current control in harsh environments and enhancing the overall performance and safety of the vehicle.
Through its excellent conductive properties and wide application applicability, IXTQ150N06P-VB has become an indispensable component in a variety of high-efficiency power and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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