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IXTQ110N10P-VB Product details
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IXTQ110N10P-VB Product Introduction
IXTQ110N10P-VB is a high-performance N-type MOSFET in TO3P package, designed for medium and high power applications. With a drain-source voltage (VDS) of up to 100V and a maximum drain current (ID) of 65A, it is suitable for a variety of power management and switching applications. The device uses advanced trench technology (Trench) and has a low on-resistance (18mΩ@VGS=10V), ensuring excellent energy efficiency and thermal management under high load conditions.
IXTQ110N10P-VB is a high-performance N-type MOSFET in TO3P package, designed for medium and high power applications. With a drain-source voltage (VDS) of up to 100V and a maximum drain current (ID) of 65A, it is suitable for a variety of power management and switching applications. The device uses advanced trench technology (Trench) and has a low on-resistance (18mΩ@VGS=10V), ensuring excellent energy efficiency and thermal management under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXTQ110N10P-VB
- **Package**: TO3P
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench technology (Trench)
- **Model**: IXTQ110N10P-VB
- **Package**: TO3P
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench technology (Trench)
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXTQ110N10P-VB is very suitable for switching power supply modules, which can operate efficiently under high current and medium voltage conditions and is widely used in power conversion and power management.
2. **Electric vehicle**: This MOSFET can be used in the power management system of electric vehicles to support the efficient charging and discharging process of the battery and ensure safety and reliability under high current conditions.
3. **Motor control**: In industrial motor drive control systems, IXTQ110N10P-VB can be used as a high current switch, suitable for the control of various motors, providing fast response and efficient current management.
4. **High power LED driver**: This device is suitable for the driver circuit of high power LED lighting, which can maintain stable light output under high current conditions to meet modern lighting needs.
In summary, the IXTQ110N10P-VB is an ideal MOSFET for medium and high power applications, able to meet the high requirements of efficiency, reliability and performance of modern power electronic equipment.
1. **Switching power supply**: IXTQ110N10P-VB is very suitable for switching power supply modules, which can operate efficiently under high current and medium voltage conditions and is widely used in power conversion and power management.
2. **Electric vehicle**: This MOSFET can be used in the power management system of electric vehicles to support the efficient charging and discharging process of the battery and ensure safety and reliability under high current conditions.
3. **Motor control**: In industrial motor drive control systems, IXTQ110N10P-VB can be used as a high current switch, suitable for the control of various motors, providing fast response and efficient current management.
4. **High power LED driver**: This device is suitable for the driver circuit of high power LED lighting, which can maintain stable light output under high current conditions to meet modern lighting needs.
In summary, the IXTQ110N10P-VB is an ideal MOSFET for medium and high power applications, able to meet the high requirements of efficiency, reliability and performance of modern power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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