IXTP50N20PM-VB Product details
Product introduction:
IXTP50N20PM-VB is a high-efficiency N-Channel MOSFET in TO220F package with high voltage resistance and conductivity. The device supports a maximum drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 45A. Its on-resistance (RDS(ON)) is only 38mΩ@VGS=10V, which is suitable for high-efficiency power conversion and switching circuits. Through Trench technology optimization, the IXTP50N20PM-VB can achieve higher switching speeds while reducing conduction losses, making it very suitable for high-power and high-frequency industrial, communication and automotive electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: IXTP50N20PM-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications:
1. **Industrial power converter**: The IXTP50N20PM-VB is suitable for power management modules in industrial power converters. It can handle voltages up to 200V and ensure efficient power conversion at high currents. It is often used in high-power power supplies and inverter systems.
2. **Communication equipment power supply**: This MOSFET can provide high-efficiency power regulation and switching functions in the power supply system of communication equipment, ensuring stable performance in high-frequency applications. It is particularly suitable for high-demand environments such as communication base stations and data centers.
3. **Motor drive**: Due to its high current handling capability, the IXTP50N20PM-VB is an ideal choice for motor control applications, including motor drives, power tools, and robotic arms in industrial automation, providing reliable support for high-speed startup and stable operation.
4. **Automotive Electronic Systems**: The device is also suitable for automotive electronics, such as electric power steering systems and on-board power control units. It can provide robust power switching support in harsh environments and improve the efficiency and stability of automotive electronic systems.
5. **High-efficiency charger and battery management system**: The IXTP50N20PM-VB can effectively improve charging efficiency, reduce switching losses, and ensure stable current control during charging and discharging in fast chargers and battery management systems. It is often used in portable devices and renewable energy storage systems.
With its excellent conduction performance and high reliability, the IXTP50N20PM-VB has demonstrated excellent performance in multiple high-voltage, high-frequency and high-power application scenarios, and is widely used in power management, industrial automation and automotive electronics.
Technical support:
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