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IXTP22N50PM-VB Product details
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Product Introduction
**IXTP22N50PM-VB** is a high-performance N-channel MOSFET in TO220F package with a high withstand voltage of 650V, designed for high voltage and medium current applications. This model has a low on-resistance (RDS(ON) of 160mΩ @ VGS=10V), ensuring excellent current conduction efficiency under high voltage conditions. Its threshold voltage (Vth) is 3.5V, supports a gate-source voltage of ±30V, and adopts SJ_Multi-EPI technology, which is designed to provide excellent thermal performance and switching speed, suitable for a variety of power electronic devices.
**IXTP22N50PM-VB** is a high-performance N-channel MOSFET in TO220F package with a high withstand voltage of 650V, designed for high voltage and medium current applications. This model has a low on-resistance (RDS(ON) of 160mΩ @ VGS=10V), ensuring excellent current conduction efficiency under high voltage conditions. Its threshold voltage (Vth) is 3.5V, supports a gate-source voltage of ±30V, and adopts SJ_Multi-EPI technology, which is designed to provide excellent thermal performance and switching speed, suitable for a variety of power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: IXTP22N50PM-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTP22N50PM-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply**: IXTP22N50PM-VB is widely used in high voltage switching power supplies (SMPS). Its high withstand voltage and low on-resistance make it excellent in high-efficiency power management and suitable for industrial power supplies and telecommunications equipment.
2. **Motor Drive**: In the motor control systems of industrial automation and electric vehicles, this MOSFET can be used as a high voltage switching element to provide efficient current transmission and excellent thermal management to improve the performance of the overall system.
3. **Inverter**: Suitable for solar and wind inverters, IXTP22N50PM-VB can handle high power and high voltage applications, ensure efficient conversion and stable output of electrical energy, and support the use of renewable energy.
4. **Consumer Electronics**: In high power LED drivers and audio amplifiers, this MOSFET improves system energy efficiency and reduces heat generation through its low on-resistance, optimizing device performance.
5. **Battery Management System**: IXTP22N50PM-VB is suitable for battery management and charging systems. It can provide stable switching capabilities under high voltage conditions to ensure safe and efficient charging and discharging of batteries.
Through the above application examples, **IXTP22N50PM-VB** has demonstrated excellent performance in various high-voltage and medium-current electronic devices, and is an ideal choice for power management and drive circuits.
1. **Switching Power Supply**: IXTP22N50PM-VB is widely used in high voltage switching power supplies (SMPS). Its high withstand voltage and low on-resistance make it excellent in high-efficiency power management and suitable for industrial power supplies and telecommunications equipment.
2. **Motor Drive**: In the motor control systems of industrial automation and electric vehicles, this MOSFET can be used as a high voltage switching element to provide efficient current transmission and excellent thermal management to improve the performance of the overall system.
3. **Inverter**: Suitable for solar and wind inverters, IXTP22N50PM-VB can handle high power and high voltage applications, ensure efficient conversion and stable output of electrical energy, and support the use of renewable energy.
4. **Consumer Electronics**: In high power LED drivers and audio amplifiers, this MOSFET improves system energy efficiency and reduces heat generation through its low on-resistance, optimizing device performance.
5. **Battery Management System**: IXTP22N50PM-VB is suitable for battery management and charging systems. It can provide stable switching capabilities under high voltage conditions to ensure safe and efficient charging and discharging of batteries.
Through the above application examples, **IXTP22N50PM-VB** has demonstrated excellent performance in various high-voltage and medium-current electronic devices, and is an ideal choice for power management and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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