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IXTP14N60PM-VB Product details
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1. Product Introduction:
IXTP14N60PM-VB is a high-voltage N-channel MOSFET in a TO-220F fully enclosed plastic package with good heat dissipation and insulation properties. Designed for high voltage applications, the device has a drain-source voltage (VDS) of 650V, can handle high voltages and has high reliability. Its gate-source voltage (VGS) can reach ±30V, and its threshold voltage (Vth) is 3.5V, which enables fast turn-on in control and switching applications. The on-resistance (RDS(ON)) of IXTP14N60PM-VB is 320mΩ (at VGS=10V), which provides excellent switching performance under high voltage conditions and is very suitable for industrial and power applications.
IXTP14N60PM-VB is a high-voltage N-channel MOSFET in a TO-220F fully enclosed plastic package with good heat dissipation and insulation properties. Designed for high voltage applications, the device has a drain-source voltage (VDS) of 650V, can handle high voltages and has high reliability. Its gate-source voltage (VGS) can reach ±30V, and its threshold voltage (Vth) is 3.5V, which enables fast turn-on in control and switching applications. The on-resistance (RDS(ON)) of IXTP14N60PM-VB is 320mΩ (at VGS=10V), which provides excellent switching performance under high voltage conditions and is very suitable for industrial and power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description:
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: Planar structure (Plannar)
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: Planar structure (Plannar)
Domain and module applications：
3. Application fields and module examples:
1. **High-voltage switching power supply (HV-SMPS)**:
IXTP14N60PM-VB is widely used in high-voltage switching power supply (HV-SMPS) design, suitable for industrial equipment, server power supply and telecommunication power supply. In these systems, its high voltage and medium current capabilities can ensure efficient power conversion and stable output.
2. **Industrial automation and control systems**:
Due to its high withstand voltage characteristics, this MOSFET is particularly suitable for motor drive modules in industrial automation control. It can operate in high-voltage environments and is suitable for applications such as industrial motor control and servo drives, providing stable and reliable performance.
3. **Inverter and solar panel system**:
IXTP14N60PM-VB can also be used in inverter design, especially for solar panel power conversion systems. In these applications, its high voltage capability ensures that the inverter can efficiently process the DC power generated by the solar power generation system and convert it into usable AC power.
4. **EV Charging System**:
In high-voltage EV charging equipment, this MOSFET is used for power conversion and switch control to ensure an efficient and reliable charging process while preventing overheating and other power anomalies.
Through these examples, the IXTP14N60PM-VB demonstrates its wide applicability in multiple high-voltage application fields, especially in key roles in industrial power conversion, high-voltage control, and energy management systems.
1. **High-voltage switching power supply (HV-SMPS)**:
IXTP14N60PM-VB is widely used in high-voltage switching power supply (HV-SMPS) design, suitable for industrial equipment, server power supply and telecommunication power supply. In these systems, its high voltage and medium current capabilities can ensure efficient power conversion and stable output.
2. **Industrial automation and control systems**:
Due to its high withstand voltage characteristics, this MOSFET is particularly suitable for motor drive modules in industrial automation control. It can operate in high-voltage environments and is suitable for applications such as industrial motor control and servo drives, providing stable and reliable performance.
3. **Inverter and solar panel system**:
IXTP14N60PM-VB can also be used in inverter design, especially for solar panel power conversion systems. In these applications, its high voltage capability ensures that the inverter can efficiently process the DC power generated by the solar power generation system and convert it into usable AC power.
4. **EV Charging System**:
In high-voltage EV charging equipment, this MOSFET is used for power conversion and switch control to ensure an efficient and reliable charging process while preventing overheating and other power anomalies.
Through these examples, the IXTP14N60PM-VB demonstrates its wide applicability in multiple high-voltage application fields, especially in key roles in industrial power conversion, high-voltage control, and energy management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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