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IXTH88N15-VB Product details
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Product Introduction
**IXTH88N15-VB** is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for medium and high current applications. The device has a drain-source voltage capability of 150V and extremely low on-resistance (RDS(ON)), making it very suitable for efficient power management and switching applications. It uses Trench technology to provide excellent current handling capabilities while maintaining low heat loss, and is widely used in various electronic devices.
**IXTH88N15-VB** is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for medium and high current applications. The device has a drain-source voltage capability of 150V and extremely low on-resistance (RDS(ON)), making it very suitable for efficient power management and switching applications. It uses Trench technology to provide excellent current handling capabilities while maintaining low heat loss, and is widely used in various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH88N15-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 12mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: IXTH88N15-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 12mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: The IXTH88N15-VB is ideal for use in switch mode power supplies (SMPS) and DC-DC converters. With its low on-resistance, it can significantly improve system efficiency and reduce heat loss.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switching device, providing fast response and high current handling capabilities, suitable for motor drives in industrial automation and electric vehicles.
3. **High-efficiency LED drive**: The IXTH88N15-VB can operate stably in a high current environment, making it ideal for use in LED lighting drive circuits to ensure stable brightness and extend the life of the LED.
4. **Inverter applications**: This MOSFET can be used in solar inverters and other types of inverter systems to help improve energy conversion efficiency and support the efficient use of renewable energy.
5. **Consumer Electronics**: IXTH88N15-VB is also suitable for high-performance battery chargers and power adapters, ensuring stability and safety during high-current charging.
These application scenarios demonstrate the wide applicability of IXTH88N15-VB in medium-to-high current and high-performance applications and its importance in modern electronic design.
1. **Power management**: The IXTH88N15-VB is ideal for use in switch mode power supplies (SMPS) and DC-DC converters. With its low on-resistance, it can significantly improve system efficiency and reduce heat loss.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switching device, providing fast response and high current handling capabilities, suitable for motor drives in industrial automation and electric vehicles.
3. **High-efficiency LED drive**: The IXTH88N15-VB can operate stably in a high current environment, making it ideal for use in LED lighting drive circuits to ensure stable brightness and extend the life of the LED.
4. **Inverter applications**: This MOSFET can be used in solar inverters and other types of inverter systems to help improve energy conversion efficiency and support the efficient use of renewable energy.
5. **Consumer Electronics**: IXTH88N15-VB is also suitable for high-performance battery chargers and power adapters, ensuring stability and safety during high-current charging.
These application scenarios demonstrate the wide applicability of IXTH88N15-VB in medium-to-high current and high-performance applications and its importance in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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