IXTH86N25T-VB Product details
Product introduction:
IXTH86N25T-VB is a high-performance N-channel power MOSFET in a TO-247 package suitable for drain-source voltage (VDS) up to 250V and maximum drain current (ID) of 60A. The device has an on-resistance (RDS(ON)) of 40mΩ (at 10V gate drive), ensuring excellent efficiency and low heat loss in high current applications. IXTH86N25T-VB is designed with advanced Trench technology to optimize switching performance and improve thermal management capabilities, making it ideal for a variety of high-power electronic applications.
** 2. IXTH86N25T-VB
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Drain current (ID)**: 60A
- **Technology**: Trench technology
- **Switching times**: Fast switching capability for high frequency applications
- **Power dissipation**: Typical 250W
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: Typical 0.5°C/W
IXTH86N25T-VB The design is designed to provide excellent power handling capability and high efficiency to meet the needs of modern power electronics applications.
Domain and module applications:
The high voltage and high current characteristics of the IXTH86N25T-VB MOSFET make it ideal for the following fields and module applications:
1. **Switching Power Supply (SMPS)**: In high-frequency switching power supplies, the IXTH86N25T-VB provides efficient power conversion, which can reduce power consumption and improve system efficiency. It is widely used in consumer electronics, industrial power supplies, and communication equipment.
2. **Motor Drive System**: This MOSFET performs well in motor control and drives, and can efficiently drive various types of motors, such as DC motors and stepper motors, suitable for automation and robotics.
3. **Uninterruptible Power Supply (UPS)**: The IXTH86N25T-VB is suitable for UPS systems, which can quickly switch to backup power when power is interrupted to ensure continuous power supply for critical equipment, especially in data centers and financial services industries.
4. **Photovoltaic inverter**: In photovoltaic power generation systems, this device can efficiently process the conversion of solar energy and improve the overall performance of the system. It is widely used in home and industrial photovoltaic solutions.
5. **Electric Vehicle (EV)**: IXTH86N25T-VB can be used in the power management and charging system of electric vehicles, supporting efficient energy conversion and power output, and improving the performance and endurance of electric vehicles.
With its excellent performance and high efficiency, IXTH86N25T-VB MOSFET provides an ideal solution for a variety of high-voltage, high-power electronic applications.
Technical support:
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