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IXTH80N20L-VB Product details
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IXTH80N20L-VB Product Introduction
The IXTH80N20L-VB is a high-performance single N-channel MOSFET in a TO247 package, designed for medium and high voltage applications. The MOSFET can withstand drain-source voltages up to 200V and support drain currents up to 96A, making it suitable for a variety of industrial and power management applications. With its low on-resistance and Trench technology, the IXTH80N20L-VB can effectively reduce power consumption and improve system efficiency, making it an ideal choice for high-efficiency power solutions.
The IXTH80N20L-VB is a high-performance single N-channel MOSFET in a TO247 package, designed for medium and high voltage applications. The MOSFET can withstand drain-source voltages up to 200V and support drain currents up to 96A, making it suitable for a variety of industrial and power management applications. With its low on-resistance and Trench technology, the IXTH80N20L-VB can effectively reduce power consumption and improve system efficiency, making it an ideal choice for high-efficiency power solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH80N20L-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 96A
- **Technology**: Trench technology
- **Model**: IXTH80N20L-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 96A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **Switching Power Supply**: IXTH80N20L-VB is very suitable for switching power supply (SMPS) and DC-DC converters. Its low on-resistance can improve power efficiency, reduce heat loss, and adapt to high power demand scenarios.
2. **Electric Vehicle**: In the power system of electric vehicles, this MOSFET can be used for motor control and charging management to ensure efficient power conversion and fast response, and improve vehicle performance.
3. **Industrial Automation**: In industrial control systems, IXTH80N20L-VB can be used to drive motors and control systems, handle high current loads, and improve production efficiency and system reliability.
4. **Renewable Energy**: In solar inverters and wind power systems, this MOSFET is suitable for efficient power conversion and energy management, improving the utilization efficiency of renewable energy.
5. **Consumer Electronics**: IXTH80N20L-VB is also suitable for high-power consumer electronics products such as power adapters and fast chargers, providing efficient and stable power output to meet users' high-performance needs.
With its high voltage and high current capabilities, IXTH80N20L-VB is an ideal choice for modern power management and control systems, and can be widely used in various high-power application scenarios.
1. **Switching Power Supply**: IXTH80N20L-VB is very suitable for switching power supply (SMPS) and DC-DC converters. Its low on-resistance can improve power efficiency, reduce heat loss, and adapt to high power demand scenarios.
2. **Electric Vehicle**: In the power system of electric vehicles, this MOSFET can be used for motor control and charging management to ensure efficient power conversion and fast response, and improve vehicle performance.
3. **Industrial Automation**: In industrial control systems, IXTH80N20L-VB can be used to drive motors and control systems, handle high current loads, and improve production efficiency and system reliability.
4. **Renewable Energy**: In solar inverters and wind power systems, this MOSFET is suitable for efficient power conversion and energy management, improving the utilization efficiency of renewable energy.
5. **Consumer Electronics**: IXTH80N20L-VB is also suitable for high-power consumer electronics products such as power adapters and fast chargers, providing efficient and stable power output to meet users' high-performance needs.
With its high voltage and high current capabilities, IXTH80N20L-VB is an ideal choice for modern power management and control systems, and can be widely used in various high-power application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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