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IXTH75N10-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXTH75N10-VB is a high-efficiency N-channel MOSFET in a TO-247 package designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 100V, the device is suitable for a variety of industrial and consumer electronics applications. Its gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 1.8V, ensuring that it can be turned on quickly at a lower gate drive voltage. The on-resistance (RDS(ON)) of IXTH75N10-VB is 18mΩ (at VGS=10V), which makes it perform well under high current conditions, greatly improving the energy efficiency and stability of the system.
IXTH75N10-VB is a high-efficiency N-channel MOSFET in a TO-247 package designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 100V, the device is suitable for a variety of industrial and consumer electronics applications. Its gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 1.8V, ensuring that it can be turned on quickly at a lower gate drive voltage. The on-resistance (RDS(ON)) of IXTH75N10-VB is 18mΩ (at VGS=10V), which makes it perform well under high current conditions, greatly improving the energy efficiency and stability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Drain current (ID)**: 72A
- **Technology type**: Trench
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Drain current (ID)**: 72A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples:
1. **Switching power supply**:
IXTH75N10-VB is commonly used in switching power supply design, especially in high-efficiency DC-DC converters. Its low on-resistance and fast switching characteristics enable it to effectively reduce power consumption and improve overall system efficiency.
2. **Motor drive**:
This MOSFET is very suitable for motor drive and servo systems, capable of handling high currents and providing stable performance, ensuring efficient control when the load changes.
3. **LED drive**:
In LED drive circuits, IXTH75N10-VB can be used to control the switching and dimming of high-power LED lamps, ensuring high efficiency and long life.
4. **Battery management system (BMS)**:
IXTH75N10-VB is also widely used in battery management systems, which can efficiently control charging and discharging to ensure battery safety and performance, especially in lithium batteries and other high-energy storage systems.
Through these examples, the IXTH75N10-VB shows its wide applicability in multiple fields, especially in power management and electric drive systems that require high efficiency and reliability.
1. **Switching power supply**:
IXTH75N10-VB is commonly used in switching power supply design, especially in high-efficiency DC-DC converters. Its low on-resistance and fast switching characteristics enable it to effectively reduce power consumption and improve overall system efficiency.
2. **Motor drive**:
This MOSFET is very suitable for motor drive and servo systems, capable of handling high currents and providing stable performance, ensuring efficient control when the load changes.
3. **LED drive**:
In LED drive circuits, IXTH75N10-VB can be used to control the switching and dimming of high-power LED lamps, ensuring high efficiency and long life.
4. **Battery management system (BMS)**:
IXTH75N10-VB is also widely used in battery management systems, which can efficiently control charging and discharging to ensure battery safety and performance, especially in lithium batteries and other high-energy storage systems.
Through these examples, the IXTH75N10-VB shows its wide applicability in multiple fields, especially in power management and electric drive systems that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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