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IXTH72N20-VB Product details
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IXTH72N20-VB Product Introduction
The IXTH72N20-VB is a high-performance N-type MOSFET in a TO247 package, designed for medium voltage and high current applications. Its drain-source voltage can reach 200V and the maximum drain current is 96A, suitable for use in high power density and high efficiency environments. The device uses advanced trench technology and has a low on-resistance (21mΩ @ VGS=10V), making it an excellent performer in power conversion and power management.
The IXTH72N20-VB is a high-performance N-type MOSFET in a TO247 package, designed for medium voltage and high current applications. Its drain-source voltage can reach 200V and the maximum drain current is 96A, suitable for use in high power density and high efficiency environments. The device uses advanced trench technology and has a low on-resistance (21mΩ @ VGS=10V), making it an excellent performer in power conversion and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH72N20-VB
- **Package**: TO247
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
- **Model**: IXTH72N20-VB
- **Package**: TO247
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: The IXTH72N20-VB is very suitable for high-efficiency power management systems. It can handle high power currents and is suitable for use in DC-DC converters and AC-DC adapters to improve energy efficiency and reduce heat generation.
2. **Motor drive**: This MOSFET is particularly suitable for motor control applications such as industrial automation and electric vehicles. Its high current carrying capacity enables efficient motor drive and control.
3. **Switching power supply**: In switching power supply modules, the low on-resistance of the IXTH72N20-VB makes it perform well in high-frequency switching operations, which can effectively improve the overall efficiency of the power supply and is suitable for various consumer electronic products.
4. **Power amplifier**: The device is also suitable for high-power amplifier design, especially in audio and RF applications, and can provide stable performance and excellent linearity.
Through the combination of the above performance and application areas, IXTH72N20-VB is an ideal choice for efficient power control and high current applications, and can meet the needs of modern power electronic equipment.
1. **Power management**: The IXTH72N20-VB is very suitable for high-efficiency power management systems. It can handle high power currents and is suitable for use in DC-DC converters and AC-DC adapters to improve energy efficiency and reduce heat generation.
2. **Motor drive**: This MOSFET is particularly suitable for motor control applications such as industrial automation and electric vehicles. Its high current carrying capacity enables efficient motor drive and control.
3. **Switching power supply**: In switching power supply modules, the low on-resistance of the IXTH72N20-VB makes it perform well in high-frequency switching operations, which can effectively improve the overall efficiency of the power supply and is suitable for various consumer electronic products.
4. **Power amplifier**: The device is also suitable for high-power amplifier design, especially in audio and RF applications, and can provide stable performance and excellent linearity.
Through the combination of the above performance and application areas, IXTH72N20-VB is an ideal choice for efficient power control and high current applications, and can meet the needs of modern power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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