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IXTH6N90-VB Product details
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Product Introduction
**IXTH6N90-VB** is a high voltage single N-channel MOSFET in TO247 package, specially designed for high voltage applications. With a maximum drain-source voltage of 900V, the device can operate stably in a high voltage environment. With an on-resistance of 1500mΩ and a maximum drain current of 5A, the IXTH6N90-VB performs well in high power and high frequency power management applications. Using SJ_Multi-EPI technology, the device has excellent thermal performance and reliability, suitable for use in harsh conditions.
**IXTH6N90-VB** is a high voltage single N-channel MOSFET in TO247 package, specially designed for high voltage applications. With a maximum drain-source voltage of 900V, the device can operate stably in a high voltage environment. With an on-resistance of 1500mΩ and a maximum drain current of 5A, the IXTH6N90-VB performs well in high power and high frequency power management applications. Using SJ_Multi-EPI technology, the device has excellent thermal performance and reliability, suitable for use in harsh conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH6N90-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH6N90-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**: The IXTH6N90-VB can be used in high-voltage switch-mode power supplies (SMPS), playing a key role in power conversion and rectification applications, supporting stable conversion of high voltages and high-efficiency operation.
2. **Electric vehicle charging system**: In electric vehicle charging equipment, this MOSFET can be used in high-voltage charging modules to ensure safe and reliable power transmission, suitable for fast charging solutions.
3. **Industrial control equipment**: The IXTH6N90-VB is suitable for switching and control applications in industrial automation systems, capable of handling high voltages and currents, and supporting efficient load management.
4. **Renewable energy systems**: In solar inverters and wind power generation systems, the device can effectively manage and convert power from renewable energy, improving overall system efficiency.
5. **Power Electronics Applications**: IXTH6N90-VB is suitable for high voltage DC (HVDC) and other power electronics applications, providing reliable switching performance and energy management to meet stringent electrical requirements.
With its high voltage performance and diverse application potential, IXTH6N90-VB is an ideal choice for all kinds of demanding electrical systems.
1. **High-voltage power converter**: The IXTH6N90-VB can be used in high-voltage switch-mode power supplies (SMPS), playing a key role in power conversion and rectification applications, supporting stable conversion of high voltages and high-efficiency operation.
2. **Electric vehicle charging system**: In electric vehicle charging equipment, this MOSFET can be used in high-voltage charging modules to ensure safe and reliable power transmission, suitable for fast charging solutions.
3. **Industrial control equipment**: The IXTH6N90-VB is suitable for switching and control applications in industrial automation systems, capable of handling high voltages and currents, and supporting efficient load management.
4. **Renewable energy systems**: In solar inverters and wind power generation systems, the device can effectively manage and convert power from renewable energy, improving overall system efficiency.
5. **Power Electronics Applications**: IXTH6N90-VB is suitable for high voltage DC (HVDC) and other power electronics applications, providing reliable switching performance and energy management to meet stringent electrical requirements.
With its high voltage performance and diverse application potential, IXTH6N90-VB is an ideal choice for all kinds of demanding electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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