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IXTH6N90A-VB Product details
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Product Introduction: IXTH6N90A-VB
The IXTH6N90A-VB is a high voltage N-channel MOSFET in a TO247 package, designed for applications requiring high voltage and medium current. Its maximum drain-source voltage (VDS) is up to 900V, enabling it to operate reliably in harsh electrical environments. The IXTH6N90A-VB has a leakage current (ID) of up to 9A, and with SJ_Multi-EPI technology, its on-resistance (RDS(ON)) is controlled at 750mΩ, making it suitable for a variety of high-efficiency power supplies and control systems.
The IXTH6N90A-VB is a high voltage N-channel MOSFET in a TO247 package, designed for applications requiring high voltage and medium current. Its maximum drain-source voltage (VDS) is up to 900V, enabling it to operate reliably in harsh electrical environments. The IXTH6N90A-VB has a leakage current (ID) of up to 9A, and with SJ_Multi-EPI technology, its on-resistance (RDS(ON)) is controlled at 750mΩ, making it suitable for a variety of high-efficiency power supplies and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXTH6N90A-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial technology)
- **Model**: IXTH6N90A-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial technology)
Domain and module applications：
Applications and module examples:
1. **High-voltage power conversion**:
- The IXTH6N90A-VB is ideal for high-voltage switch-mode power supplies (SMPS) and can operate stably at input voltages up to 900V. Its low on-resistance helps improve energy conversion efficiency and reduce power losses.
2. **Industrial control**:
- In industrial automation and control systems, this MOSFET can effectively control high-voltage loads and is suitable for motor drives and servo controls, ensuring stability and high efficiency under high voltage conditions.
3. **Photovoltaic inverter**:
- The IXTH6N90A-VB is widely used in inverters in photovoltaic power generation systems, converting DC power generated by solar panels into AC power. Its high voltage withstand capability ensures safe operation of the inverter at high input voltages.
4. **Uninterruptible Power Supply (UPS) System**:
- In UPS systems, this MOSFET is used for high voltage conversion and control, ensuring rapid response and stable current output in the event of a power failure, ensuring continuous power supply to critical equipment.
Through these applications, the IXTH6N90A-VB has become an important component in high voltage and high power electronic design with its excellent electrical performance, meeting the wide range of needs in the field of modern power electronics.
1. **High-voltage power conversion**:
- The IXTH6N90A-VB is ideal for high-voltage switch-mode power supplies (SMPS) and can operate stably at input voltages up to 900V. Its low on-resistance helps improve energy conversion efficiency and reduce power losses.
2. **Industrial control**:
- In industrial automation and control systems, this MOSFET can effectively control high-voltage loads and is suitable for motor drives and servo controls, ensuring stability and high efficiency under high voltage conditions.
3. **Photovoltaic inverter**:
- The IXTH6N90A-VB is widely used in inverters in photovoltaic power generation systems, converting DC power generated by solar panels into AC power. Its high voltage withstand capability ensures safe operation of the inverter at high input voltages.
4. **Uninterruptible Power Supply (UPS) System**:
- In UPS systems, this MOSFET is used for high voltage conversion and control, ensuring rapid response and stable current output in the event of a power failure, ensuring continuous power supply to critical equipment.
Through these applications, the IXTH6N90A-VB has become an important component in high voltage and high power electronic design with its excellent electrical performance, meeting the wide range of needs in the field of modern power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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