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IXTH6N50D2-VB Product details
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**
IXTH6N50D2-VB is a high-voltage N-channel power MOSFET in a TO-247 package with a drain-source voltage (VDS) of up to 500V and a maximum drain current (ID) of 40A. Its on-resistance (RDS(ON)) is 80mΩ (at 10V gate drive), enabling efficient energy conversion in high-voltage and high-current environments. IXTH6N50D2-VB uses advanced Super Junction (SJ) and Multi-EPI technologies to improve switching performance and reduce heat loss, making it suitable for a variety of high-power electronic applications.
** 2. IXTH6N50D2-VB
IXTH6N50D2-VB is a high-voltage N-channel power MOSFET in a TO-247 package with a drain-source voltage (VDS) of up to 500V and a maximum drain current (ID) of 40A. Its on-resistance (RDS(ON)) is 80mΩ (at 10V gate drive), enabling efficient energy conversion in high-voltage and high-current environments. IXTH6N50D2-VB uses advanced Super Junction (SJ) and Multi-EPI technologies to improve switching performance and reduce heat loss, making it suitable for a variety of high-power electronic applications.
** 2. IXTH6N50D2-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
**
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI technology
- **Switching time**: Fast switching capability for high frequency applications
- **Power dissipation**: Typical 460W
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: Typical 0.32°C/W
The design of IXTH6N50D2-VB ensures its excellent performance and high reliability under high voltage and high current conditions.
**Three,
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI technology
- **Switching time**: Fast switching capability for high frequency applications
- **Power dissipation**: Typical 460W
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: Typical 0.32°C/W
The design of IXTH6N50D2-VB ensures its excellent performance and high reliability under high voltage and high current conditions.
**Three,
Domain and module applications：
**
The high voltage and high current capabilities of the IXTH6N50D2-VB MOSFET make it ideal for the following fields and module applications:
1. **Switching Power Supply (SMPS)**: In high-voltage switching power supplies, this MOSFET can provide efficient power conversion, ensure low energy consumption and high reliability, and is widely used in industrial power supplies, computer power supplies, etc.
2. **Renewable Energy Systems**: The IXTH6N50D2-VB is widely used in photovoltaic inverters and wind power generation systems, and can efficiently handle the conversion of solar and wind energy to improve overall energy utilization.
3. **Electric Vehicles (EV)**: In the power management system of electric vehicles, this MOSFET is used for motor drive and charging control, supporting efficient energy management and high power output to ensure efficient operation of electric vehicles.
4. **Uninterruptible Power Supply (UPS)**: The IXTH6N50D2-VB is suitable for UPS systems, which can quickly provide backup power when the power is interrupted to ensure the continuous operation of critical equipment, especially in the fields of finance and medical care.
5. **High-voltage inverter**: This device can be used in high-voltage inverters to efficiently adjust the operating speed of the motor. It is widely used in HVAC, industrial automation and other fields to improve overall energy efficiency.
Through its excellent performance and high efficiency, the IXTH6N50D2-VB MOSFET provides an ideal solution for a variety of high-voltage, high-power electronic applications.
The high voltage and high current capabilities of the IXTH6N50D2-VB MOSFET make it ideal for the following fields and module applications:
1. **Switching Power Supply (SMPS)**: In high-voltage switching power supplies, this MOSFET can provide efficient power conversion, ensure low energy consumption and high reliability, and is widely used in industrial power supplies, computer power supplies, etc.
2. **Renewable Energy Systems**: The IXTH6N50D2-VB is widely used in photovoltaic inverters and wind power generation systems, and can efficiently handle the conversion of solar and wind energy to improve overall energy utilization.
3. **Electric Vehicles (EV)**: In the power management system of electric vehicles, this MOSFET is used for motor drive and charging control, supporting efficient energy management and high power output to ensure efficient operation of electric vehicles.
4. **Uninterruptible Power Supply (UPS)**: The IXTH6N50D2-VB is suitable for UPS systems, which can quickly provide backup power when the power is interrupted to ensure the continuous operation of critical equipment, especially in the fields of finance and medical care.
5. **High-voltage inverter**: This device can be used in high-voltage inverters to efficiently adjust the operating speed of the motor. It is widely used in HVAC, industrial automation and other fields to improve overall energy efficiency.
Through its excellent performance and high efficiency, the IXTH6N50D2-VB MOSFET provides an ideal solution for a variety of high-voltage, high-power electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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