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IXTH60N15-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
The IXTH60N15-VB is a high-performance N-channel MOSFET in a TO-247 package, designed for high current and medium voltage applications. With a drain-source voltage (VDS) of 150V, the device is suitable for a variety of industrial applications. Its gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 3V, ensuring that it can be turned on at a lower gate drive voltage. The on-resistance (RDS(ON)) of the IXTH60N15-VB is only 12mΩ (at VGS=10V), which enables it to effectively reduce power consumption and optimize system performance under high current conditions.
The IXTH60N15-VB is a high-performance N-channel MOSFET in a TO-247 package, designed for high current and medium voltage applications. With a drain-source voltage (VDS) of 150V, the device is suitable for a variety of industrial applications. Its gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 3V, ensuring that it can be turned on at a lower gate drive voltage. The on-resistance (RDS(ON)) of the IXTH60N15-VB is only 12mΩ (at VGS=10V), which enables it to effectively reduce power consumption and optimize system performance under high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 12mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 12mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples:
1. **Power management system**:
IXTH60N15-VB is commonly used in high-efficiency switching power supplies and DC-DC converters. Its low on-resistance characteristics enable it to operate under high load conditions, improve conversion efficiency and reduce energy loss.
2. **Electric vehicles and motor control**:
Due to its high current carrying capacity and medium voltage capability, this MOSFET is very suitable for use in electric vehicle motor drive and control systems, enabling efficient power conversion and control.
3. **UPS and uninterruptible power supply**:
IXTH60N15-VB is also suitable for UPS systems, providing high-efficiency solutions in power switching and load control to ensure continuous power supply to the system during power outages.
4. **Battery Management System (BMS)**:
This device plays an important role in battery management systems, especially in lithium batteries and other high energy storage systems, for charge, discharge control and over-current protection to ensure battery safety and performance.
Through these examples, the IXTH60N15-VB shows its applicability in multiple application areas, especially in power management and electric drive systems with high efficiency and high reliability requirements.
1. **Power management system**:
IXTH60N15-VB is commonly used in high-efficiency switching power supplies and DC-DC converters. Its low on-resistance characteristics enable it to operate under high load conditions, improve conversion efficiency and reduce energy loss.
2. **Electric vehicles and motor control**:
Due to its high current carrying capacity and medium voltage capability, this MOSFET is very suitable for use in electric vehicle motor drive and control systems, enabling efficient power conversion and control.
3. **UPS and uninterruptible power supply**:
IXTH60N15-VB is also suitable for UPS systems, providing high-efficiency solutions in power switching and load control to ensure continuous power supply to the system during power outages.
4. **Battery Management System (BMS)**:
This device plays an important role in battery management systems, especially in lithium batteries and other high energy storage systems, for charge, discharge control and over-current protection to ensure battery safety and performance.
Through these examples, the IXTH60N15-VB shows its applicability in multiple application areas, especially in power management and electric drive systems with high efficiency and high reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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