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IXTH50N30-VB Product details
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Product Introduction
**IXTH50N30-VB** is a high-performance N-channel MOSFET in TO247 package with 650V withstand voltage, suitable for high voltage applications. This model is designed for high current applications, with an on-resistance (RDS(ON) of 75mΩ @ VGS=10V) to ensure high efficiency under high current conditions. Its threshold voltage (Vth) is 3.5V, supports a gate-source voltage of ±30V, and uses advanced SJ_Multi-EPI technology to provide excellent electrical performance and thermal management capabilities. It is widely used in various power electronic devices.
**IXTH50N30-VB** is a high-performance N-channel MOSFET in TO247 package with 650V withstand voltage, suitable for high voltage applications. This model is designed for high current applications, with an on-resistance (RDS(ON) of 75mΩ @ VGS=10V) to ensure high efficiency under high current conditions. Its threshold voltage (Vth) is 3.5V, supports a gate-source voltage of ±30V, and uses advanced SJ_Multi-EPI technology to provide excellent electrical performance and thermal management capabilities. It is widely used in various power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH50N30-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH50N30-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power converter**: IXTH50N30-VB is suitable for high-voltage switch-mode power supplies (SMPS) and DC-DC converters (DC-DC), and performs well under high voltage and high current conditions to ensure efficient energy conversion.
2. **Electric vehicles**: This MOSFET can be used in the power control system of electric vehicles to handle high current and high voltage, improve the efficiency of motor drive and system stability.
3. **Industrial automation**: In industrial equipment, IXTH50N30-VB can be used as a switching element in motor control and drive circuits to support high power applications and ensure efficient operation and reliability of equipment.
4. **Inverter**: Suitable for solar photovoltaic inverters and wind power inverters, it can withstand high voltage input and provide efficient power conversion and management capabilities.
5. **Consumer electronics**: In high-power LED drivers and high-frequency power amplifiers, the low on-resistance and high withstand voltage characteristics of this MOSFET help improve the energy efficiency and stability of the system.
Through the above application examples, **IXTH50N30-VB** demonstrates excellent performance in various high-voltage and high-current electronic devices, and is an ideal choice for power management and drive circuits.
1. **Power converter**: IXTH50N30-VB is suitable for high-voltage switch-mode power supplies (SMPS) and DC-DC converters (DC-DC), and performs well under high voltage and high current conditions to ensure efficient energy conversion.
2. **Electric vehicles**: This MOSFET can be used in the power control system of electric vehicles to handle high current and high voltage, improve the efficiency of motor drive and system stability.
3. **Industrial automation**: In industrial equipment, IXTH50N30-VB can be used as a switching element in motor control and drive circuits to support high power applications and ensure efficient operation and reliability of equipment.
4. **Inverter**: Suitable for solar photovoltaic inverters and wind power inverters, it can withstand high voltage input and provide efficient power conversion and management capabilities.
5. **Consumer electronics**: In high-power LED drivers and high-frequency power amplifiers, the low on-resistance and high withstand voltage characteristics of this MOSFET help improve the energy efficiency and stability of the system.
Through the above application examples, **IXTH50N30-VB** demonstrates excellent performance in various high-voltage and high-current electronic devices, and is an ideal choice for power management and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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