IXTH450P2-VB Product details
Product introduction:
IXTH450P2-VB is a high-voltage N-channel power MOSFET in a TO-247 package that supports drain-source voltage (VDS) up to 500V and maximum drain current (ID) of 40A. The device has a low on-resistance (RDS(ON)) of 80mΩ (at 10V gate drive), ensuring efficient energy conversion in high-voltage applications. The use of Super Junction (SJ) and Multi-EPI technology gives it excellent switching and thermal performance, making it suitable for a variety of high-power, high-voltage applications, and is an ideal choice for modern power electronics design.
**II. IXTH450P2-VB
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI technology
- **Switching time**: Fast switching capability, suitable for high frequency applications
- **Power dissipation**: 460W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: Typical 0.32°C/W
The device is designed to provide excellent power handling capabilities and efficient thermal management to meet the needs of modern power electronics applications.
**Three,
Domain and module applications:
The high voltage and high current handling capabilities of the IXTH450P2-VB MOSFET make it ideal for the following fields and module applications:
1. **High-efficiency power converters**: In switch mode power supplies (SMPS) and high-voltage DC-DC converters, the IXTH450P2-VB can effectively reduce energy loss and provide higher conversion efficiency, especially suitable for industrial power supplies, servers and data center power management.
2. **Renewable energy systems**: This MOSFET plays an important role in photovoltaic inverters and wind power generation systems. It can handle high voltage and high power, ensure efficient conversion of energy, and improve the overall utilization of renewable energy.
3. **Motor control and drive systems**: In high-voltage motor drive and inverter applications, the IXTH450P2-VB can provide reliable and efficient control, suitable for industrial automation and high-voltage motor control systems, significantly improving the operating efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**: This device is suitable for UPS systems, which can quickly switch to backup power when power is interrupted to ensure the continuous operation of critical equipment, especially in fields such as medical, financial and data centers that require high power reliability.
5. **High-voltage inverter**: IXTH450P2-VB is widely used in variable frequency control systems, which can efficiently adjust motor speed and save energy. It is suitable for HVAC systems, industrial pumps and fan control, etc.
By combining its high voltage and high efficiency characteristics, the IXTH450P2-VB MOSFET provides an ideal solution for a variety of power electronics applications.
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