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IXTH40N50L2-VB Product details
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Product Introduction: IXTH40N50L2-VB
IXTH40N50L2-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, the leakage current (ID) can reach 40A, and it has excellent on-resistance (RDS(ON)), which is only 80mΩ when VGS is 10V. This MOSFET adopts Super Junction (SJ) multi-epitaxial technology, which can provide excellent efficiency and low switching loss under high voltage conditions, making it outstanding in power management and industrial automation.
IXTH40N50L2-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, the leakage current (ID) can reach 40A, and it has excellent on-resistance (RDS(ON)), which is only 80mΩ when VGS is 10V. This MOSFET adopts Super Junction (SJ) multi-epitaxial technology, which can provide excellent efficiency and low switching loss under high voltage conditions, making it outstanding in power management and industrial automation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH40N50L2-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Super Junction (SJ) multi-epitaxial
- **Model**: IXTH40N50L2-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Super Junction (SJ) multi-epitaxial
Domain and module applications：
Applications and module examples
1. **High-voltage power converters**:
The IXTH40N50L2-VB is ideal for use in high-voltage DC-DC converters, inverters, and other power management systems as the main switching element to achieve efficient energy conversion and reduce energy losses.
2. **Solar inverters**:
In solar photovoltaic systems, this MOSFET can be used as a key component of the inverter, handling the power conversion from DC to AC, ensuring efficient operation and reliability of the system.
3. **Motor drive systems**:
Suitable for a variety of motor drive applications, including industrial motors and brushless DC motors (BLDC), providing powerful power control capabilities and fast response characteristics, suitable for harsh industrial environments.
4. **Uninterruptible power supply (UPS) and power conditioning equipment**:
The IXTH40N50L2-VB can be used in UPS systems, playing a key role in power switching and voltage regulation, ensuring that the equipment can operate safely and stably in the event of power outages or voltage fluctuations.
Through these applications, the IXTH40N50L2-VB demonstrates its superior performance in high voltage and high current handling, providing a reliable solution for power management and drive applications.
1. **High-voltage power converters**:
The IXTH40N50L2-VB is ideal for use in high-voltage DC-DC converters, inverters, and other power management systems as the main switching element to achieve efficient energy conversion and reduce energy losses.
2. **Solar inverters**:
In solar photovoltaic systems, this MOSFET can be used as a key component of the inverter, handling the power conversion from DC to AC, ensuring efficient operation and reliability of the system.
3. **Motor drive systems**:
Suitable for a variety of motor drive applications, including industrial motors and brushless DC motors (BLDC), providing powerful power control capabilities and fast response characteristics, suitable for harsh industrial environments.
4. **Uninterruptible power supply (UPS) and power conditioning equipment**:
The IXTH40N50L2-VB can be used in UPS systems, playing a key role in power switching and voltage regulation, ensuring that the equipment can operate safely and stably in the event of power outages or voltage fluctuations.
Through these applications, the IXTH40N50L2-VB demonstrates its superior performance in high voltage and high current handling, providing a reliable solution for power management and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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