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IXTH40N30-VB Product details
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IXTH40N30-VB Product Introduction
The IXTH40N30-VB is a high-voltage N-Channel MOSFET in a TO247 package, designed for high-power and high-voltage applications. The device has a maximum drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, making it suitable for applications that require high current handling. Its on-resistance (RDS(ON)) is 80mΩ@VGS=10V, which can maintain low energy loss during switching. Based on SJ_Multi-EPI technology, the IXTH40N30-VB can operate stably in high temperature and high voltage environments, and is widely used in power management, drive systems, industrial control and other fields.
The IXTH40N30-VB is a high-voltage N-Channel MOSFET in a TO247 package, designed for high-power and high-voltage applications. The device has a maximum drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, making it suitable for applications that require high current handling. Its on-resistance (RDS(ON)) is 80mΩ@VGS=10V, which can maintain low energy loss during switching. Based on SJ_Multi-EPI technology, the IXTH40N30-VB can operate stably in high temperature and high voltage environments, and is widely used in power management, drive systems, industrial control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH40N30-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH40N30-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-efficiency switching power supply (SMPS)**: The IXTH40N30-VB is ideal for high-efficiency switching power supply design, capable of low-loss power conversion under high voltage conditions, ensuring the overall energy efficiency of the equipment, and is widely used in computer power supplies and communication equipment.
2. **Motor control system**: This MOSFET can be used as a motor driver, especially in industrial applications with high current requirements. Its high current handling capability and stable performance enable it to drive large motors to meet the needs of industrial automation and mechanical control.
3. **Renewable energy inverter**: In solar inverters and wind power generation systems, the IXTH40N30-VB can effectively perform high-efficiency power conversion, help achieve high-voltage DC to AC conversion, and optimize the use of renewable energy.
4. **Battery management system (BMS)**: In the battery management system, the device can ensure safety and stability under high voltage and high current operation, suitable for electric vehicles and energy storage systems, and improve battery efficiency.
5. **High-voltage power electronics**: The IXTH40N30-VB is also suitable for a variety of high-voltage power electronics applications, including uninterruptible power supplies (UPS) and power converters, ensuring high efficiency and stability under high power and high voltage conditions.
With its excellent performance and reliability, the IXTH40N30-VB has become an important power management component in multiple industries, especially in applications that require high voltage and high current handling, showing excellent performance.
1. **High-efficiency switching power supply (SMPS)**: The IXTH40N30-VB is ideal for high-efficiency switching power supply design, capable of low-loss power conversion under high voltage conditions, ensuring the overall energy efficiency of the equipment, and is widely used in computer power supplies and communication equipment.
2. **Motor control system**: This MOSFET can be used as a motor driver, especially in industrial applications with high current requirements. Its high current handling capability and stable performance enable it to drive large motors to meet the needs of industrial automation and mechanical control.
3. **Renewable energy inverter**: In solar inverters and wind power generation systems, the IXTH40N30-VB can effectively perform high-efficiency power conversion, help achieve high-voltage DC to AC conversion, and optimize the use of renewable energy.
4. **Battery management system (BMS)**: In the battery management system, the device can ensure safety and stability under high voltage and high current operation, suitable for electric vehicles and energy storage systems, and improve battery efficiency.
5. **High-voltage power electronics**: The IXTH40N30-VB is also suitable for a variety of high-voltage power electronics applications, including uninterruptible power supplies (UPS) and power converters, ensuring high efficiency and stability under high power and high voltage conditions.
With its excellent performance and reliability, the IXTH40N30-VB has become an important power management component in multiple industries, especially in applications that require high voltage and high current handling, showing excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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