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IXTH36N50P-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXTH36N50P-VB is a high-performance N-channel MOSFET in TO-247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 500V, suitable for operation in high voltage environments. The device has a gate-source voltage (VGS) of ±30V and excellent conduction performance, with an RDS(ON) of 80mΩ (at VGS=10V). With SJ_Multi-EPI technology, this MOSFET excels in high efficiency and thermal management, and is suitable for a variety of industrial and consumer electronics applications.
IXTH36N50P-VB is a high-performance N-channel MOSFET in TO-247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 500V, suitable for operation in high voltage environments. The device has a gate-source voltage (VGS) of ±30V and excellent conduction performance, with an RDS(ON) of 80mΩ (at VGS=10V). With SJ_Multi-EPI technology, this MOSFET excels in high efficiency and thermal management, and is suitable for a variety of industrial and consumer electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples:
1. **Power converter**:
IXTH36N50P-VB is commonly used in high-frequency switching power supplies and DC-DC converters. Its high drain-source voltage capability and low on-resistance enable it to efficiently manage power, improve system conversion efficiency, and reduce energy loss.
2. **Inverter**:
In photovoltaic inverters and other renewable energy systems, this MOSFET is the main switching element that can handle high voltage and high current to ensure efficient and reliable energy conversion.
3. **Motor drive**:
IXTH36N50P-VB is suitable for industrial motor drives and servo control systems. Its high current carrying capacity enables it to cope with high load conditions, achieve precise control and high-efficiency operation.
4. **Battery Management System (BMS)**:
This device can be used in the battery management system to implement battery charging, discharging control and overcurrent protection, especially in high-voltage lithium battery systems, to ensure the safety and reliability of the system.
Through these examples, IXTH36N50P-VB shows its wide applicability in a variety of application fields, especially in the field of power management and conversion with high efficiency and high reliability requirements.
1. **Power converter**:
IXTH36N50P-VB is commonly used in high-frequency switching power supplies and DC-DC converters. Its high drain-source voltage capability and low on-resistance enable it to efficiently manage power, improve system conversion efficiency, and reduce energy loss.
2. **Inverter**:
In photovoltaic inverters and other renewable energy systems, this MOSFET is the main switching element that can handle high voltage and high current to ensure efficient and reliable energy conversion.
3. **Motor drive**:
IXTH36N50P-VB is suitable for industrial motor drives and servo control systems. Its high current carrying capacity enables it to cope with high load conditions, achieve precise control and high-efficiency operation.
4. **Battery Management System (BMS)**:
This device can be used in the battery management system to implement battery charging, discharging control and overcurrent protection, especially in high-voltage lithium battery systems, to ensure the safety and reliability of the system.
Through these examples, IXTH36N50P-VB shows its wide applicability in a variety of application fields, especially in the field of power management and conversion with high efficiency and high reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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