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IXTH30N60P-VB Product details
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IXTH30N60P-VB Product Introduction
The IXTH30N60P-VB is a high voltage N-type MOSFET in a TO247 package, designed for high voltage and high power applications. The device can withstand drain-source voltages up to 650V and has excellent current carrying capability with a maximum drain current of 20A. By adopting advanced SJ_Multi-EPI technology, this MOSFET has a low on-resistance and is suitable for a variety of power management and power conversion applications, making it an ideal choice for high-efficiency power supply designs.
The IXTH30N60P-VB is a high voltage N-type MOSFET in a TO247 package, designed for high voltage and high power applications. The device can withstand drain-source voltages up to 650V and has excellent current carrying capability with a maximum drain current of 20A. By adopting advanced SJ_Multi-EPI technology, this MOSFET has a low on-resistance and is suitable for a variety of power management and power conversion applications, making it an ideal choice for high-efficiency power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH30N60P-VB
- **Package**: TO247
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH30N60P-VB
- **Package**: TO247
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXTH30N60P-VB is widely used in switching power supply design, which can effectively handle high voltage and high power conversion requirements and improve system efficiency and stability.
2. **Inverter**: This MOSFET is particularly suitable for solar inverters and other types of power inverters. Its high withstand voltage and low on-resistance characteristics ensure high efficiency and reliability of power conversion.
3. **Industrial power management**: IXTH30N60P-VB can be used to drive high-power loads in industrial power management systems, and is suitable for motor control and power management of various automation equipment.
4. **Power tools and home appliances**: This model of MOSFET is also suitable for power tools and high-power home appliances, and can provide efficient and reliable power solutions in these applications.
With its excellent electrical performance and high reliability, the IXTH30N60P-VB is an ideal choice for high voltage applications and can meet the stringent requirements of modern power electronic equipment.
1. **Switching power supply**: IXTH30N60P-VB is widely used in switching power supply design, which can effectively handle high voltage and high power conversion requirements and improve system efficiency and stability.
2. **Inverter**: This MOSFET is particularly suitable for solar inverters and other types of power inverters. Its high withstand voltage and low on-resistance characteristics ensure high efficiency and reliability of power conversion.
3. **Industrial power management**: IXTH30N60P-VB can be used to drive high-power loads in industrial power management systems, and is suitable for motor control and power management of various automation equipment.
4. **Power tools and home appliances**: This model of MOSFET is also suitable for power tools and high-power home appliances, and can provide efficient and reliable power solutions in these applications.
With its excellent electrical performance and high reliability, the IXTH30N60P-VB is an ideal choice for high voltage applications and can meet the stringent requirements of modern power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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