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IXTH30N60L2-VB Product details
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Product Introduction
**IXTH30N60L2-VB** is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. With a maximum drain-source voltage of 650V, it can withstand harsh working environments and is suitable for use in high voltage power conversion and industrial control systems. With a low on-resistance of 160mΩ, the IXTH30N60L2-VB has excellent thermal performance and current handling capabilities, and the use of SJ_Multi-EPI technology further improves the reliability and efficiency of the device.
**IXTH30N60L2-VB** is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. With a maximum drain-source voltage of 650V, it can withstand harsh working environments and is suitable for use in high voltage power conversion and industrial control systems. With a low on-resistance of 160mΩ, the IXTH30N60L2-VB has excellent thermal performance and current handling capabilities, and the use of SJ_Multi-EPI technology further improves the reliability and efficiency of the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH30N60L2-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH30N60L2-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power conversion**: The IXTH30N60L2-VB is suitable for high-voltage switch-mode power supplies (SMPS), where its high voltage and low on-resistance can significantly improve energy conversion efficiency and reduce heat loss.
2. **Electric vehicles**: In the power management system of electric vehicles, this MOSFET can handle high voltage and current, and is suitable for motor drives, charging modules and energy recovery systems to ensure reliability and efficiency.
3. **Industrial control systems**: The IXTH30N60L2-VB can be used for power regulation and control in industrial automation equipment, helping to achieve precise current management and switch control, and is suitable for equipment such as robots and sensors.
4. **Renewable energy systems**: In solar inverters and wind power generation systems, this MOSFET can be used for power conversion and inversion processes to improve the overall efficiency of the system, especially in high power and high voltage environments.
5. **Power Electronics**: The high voltage performance of the IXTH30N60L2-VB makes it an ideal choice for high voltage direct current (HVDC) and energy storage systems, supporting efficient energy management and regulation.
Through these applications, the IXTH30N60L2-VB is able to provide reliable solutions for a variety of demanding electrical systems and is an excellent choice in various power management and control applications.
1. **High-voltage power conversion**: The IXTH30N60L2-VB is suitable for high-voltage switch-mode power supplies (SMPS), where its high voltage and low on-resistance can significantly improve energy conversion efficiency and reduce heat loss.
2. **Electric vehicles**: In the power management system of electric vehicles, this MOSFET can handle high voltage and current, and is suitable for motor drives, charging modules and energy recovery systems to ensure reliability and efficiency.
3. **Industrial control systems**: The IXTH30N60L2-VB can be used for power regulation and control in industrial automation equipment, helping to achieve precise current management and switch control, and is suitable for equipment such as robots and sensors.
4. **Renewable energy systems**: In solar inverters and wind power generation systems, this MOSFET can be used for power conversion and inversion processes to improve the overall efficiency of the system, especially in high power and high voltage environments.
5. **Power Electronics**: The high voltage performance of the IXTH30N60L2-VB makes it an ideal choice for high voltage direct current (HVDC) and energy storage systems, supporting efficient energy management and regulation.
Through these applications, the IXTH30N60L2-VB is able to provide reliable solutions for a variety of demanding electrical systems and is an excellent choice in various power management and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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