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IXTH30N50-VB Product details
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Product Introduction: IXTH30N50-VB
IXTH30N50-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 500V, and the maximum drain current (ID) can reach 40A, which can meet the stringent electrical conditions. With the advanced SJ_Multi-EPI technology, IXTH30N50-VB has excellent switching performance while ensuring low on-resistance, and is widely used in power management and industrial control.
IXTH30N50-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 500V, and the maximum drain current (ID) can reach 40A, which can meet the stringent electrical conditions. With the advanced SJ_Multi-EPI technology, IXTH30N50-VB has excellent switching performance while ensuring low on-resistance, and is widely used in power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXTH30N50-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial technology)
- **Model**: IXTH30N50-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial technology)
Domain and module applications：
Applications and module examples:
1. **High-voltage switching power supply**:
- The IXTH30N50-VB is suitable for use in high-voltage switching power supplies (SMPS) and can handle input voltages up to 500V. Its low on-resistance characteristics help improve energy conversion efficiency, reduce heat generation, and improve the overall performance of the power system.
2. **Inverter**:
- In solar inverters and electric vehicle inverters, this MOSFET is used to convert DC power to AC power. With its high voltage withstand capability and excellent switching characteristics, the IXTH30N50-VB can ensure stable and reliable operation under different operating conditions and improve system efficiency.
3. **Industrial automation**:
- The IXTH30N50-VB performs well in industrial motor drive systems, can control the start-up and operation of high-power motors, ensure the stability and high efficiency of equipment under high load conditions, and is an indispensable component in industrial automation and robotics.
4. **Uninterruptible Power Supply (UPS) System**:
- In an uninterruptible power supply system, the device can quickly respond to power failures or fluctuations and provide stable power output. Its high voltage and high current handling capabilities make it an ideal switching element in UPS equipment to ensure continuous power supply to critical loads.
In summary, IXTH30N50-VB has been widely used in multiple high-voltage and high-power application fields due to its high-performance characteristics, providing strong support for the design of modern power electronic systems.
1. **High-voltage switching power supply**:
- The IXTH30N50-VB is suitable for use in high-voltage switching power supplies (SMPS) and can handle input voltages up to 500V. Its low on-resistance characteristics help improve energy conversion efficiency, reduce heat generation, and improve the overall performance of the power system.
2. **Inverter**:
- In solar inverters and electric vehicle inverters, this MOSFET is used to convert DC power to AC power. With its high voltage withstand capability and excellent switching characteristics, the IXTH30N50-VB can ensure stable and reliable operation under different operating conditions and improve system efficiency.
3. **Industrial automation**:
- The IXTH30N50-VB performs well in industrial motor drive systems, can control the start-up and operation of high-power motors, ensure the stability and high efficiency of equipment under high load conditions, and is an indispensable component in industrial automation and robotics.
4. **Uninterruptible Power Supply (UPS) System**:
- In an uninterruptible power supply system, the device can quickly respond to power failures or fluctuations and provide stable power output. Its high voltage and high current handling capabilities make it an ideal switching element in UPS equipment to ensure continuous power supply to critical loads.
In summary, IXTH30N50-VB has been widely used in multiple high-voltage and high-power application fields due to its high-performance characteristics, providing strong support for the design of modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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