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IXTH30N50P-VB Product details
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Product Introduction
**IXTH30N50P-VB** is a high-performance unipolar N-channel MOSFET in a TO247 package designed for high voltage applications. With its 500V drain-source voltage capability and low on-resistance, the IXTH30N50P-VB is suitable for use in power management and inverter systems that require high efficiency and high power density. The device uses Super Junction (SJ) and Multi-EPI technology to provide excellent thermal and electrical performance.
**IXTH30N50P-VB** is a high-performance unipolar N-channel MOSFET in a TO247 package designed for high voltage applications. With its 500V drain-source voltage capability and low on-resistance, the IXTH30N50P-VB is suitable for use in power management and inverter systems that require high efficiency and high power density. The device uses Super Junction (SJ) and Multi-EPI technology to provide excellent thermal and electrical performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH30N50P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 40A
- **Technology**: Super Junction (SJ) and Multi-EPI technology
- **Model**: IXTH30N50P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 40A
- **Technology**: Super Junction (SJ) and Multi-EPI technology
Domain and module applications：
Application fields and module examples
1. **High-voltage power converter**: IXTH30N50P-VB is particularly suitable for high-voltage switching power supplies (SMPS). Its high withstand voltage and low on-resistance can significantly improve conversion efficiency and reduce heat generation to ensure stable system operation.
2. **Solar inverter**: In solar systems, this MOSFET can efficiently convert DC to AC in a high-voltage environment, improve energy utilization, and support the efficient application of renewable energy.
3. **Electric vehicles**: IXTH30N50P-VB can be used in the drive system of electric vehicles to efficiently control the power output of the motor. Its high voltage and high current characteristics meet the stringent requirements of electric vehicles for the power system.
4. **Industrial automation equipment**: This MOSFET is suitable for industrial control and automation equipment. It can provide efficient and reliable performance in applications such as motor drive and switch control to ensure the efficiency and safety of industrial processes.
5. **LED lighting driver**: IXTH30N50P-VB can be used in high-voltage LED lighting driver circuits to achieve efficient lighting solutions by providing stable current and voltage, improving energy efficiency and extending the life of LEDs.
These application scenarios demonstrate the wide applicability of IXTH30N50P-VB in high-voltage and high-power applications and its importance in modern electronic design.
1. **High-voltage power converter**: IXTH30N50P-VB is particularly suitable for high-voltage switching power supplies (SMPS). Its high withstand voltage and low on-resistance can significantly improve conversion efficiency and reduce heat generation to ensure stable system operation.
2. **Solar inverter**: In solar systems, this MOSFET can efficiently convert DC to AC in a high-voltage environment, improve energy utilization, and support the efficient application of renewable energy.
3. **Electric vehicles**: IXTH30N50P-VB can be used in the drive system of electric vehicles to efficiently control the power output of the motor. Its high voltage and high current characteristics meet the stringent requirements of electric vehicles for the power system.
4. **Industrial automation equipment**: This MOSFET is suitable for industrial control and automation equipment. It can provide efficient and reliable performance in applications such as motor drive and switch control to ensure the efficiency and safety of industrial processes.
5. **LED lighting driver**: IXTH30N50P-VB can be used in high-voltage LED lighting driver circuits to achieve efficient lighting solutions by providing stable current and voltage, improving energy efficiency and extending the life of LEDs.
These application scenarios demonstrate the wide applicability of IXTH30N50P-VB in high-voltage and high-power applications and its importance in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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