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IXTH30N50L-VB Product details
Back to previous pageProduct introduction：
**
IXTH30N50L-VB is a high-voltage N-channel MOSFET in a TO-247 package that supports up to 500V drain-source voltage (VDS) and 40A drain current (ID). The device has an on-resistance (RDS(ON)) of 80mΩ and performs well at a 10V gate drive. It uses Super Junction (SJ) and Multi-EPI technology to optimize its efficiency and switching performance at high voltage and high frequency. This MOSFET is particularly suitable for high-power, high-voltage applications, providing higher power conversion efficiency and lower power consumption.
**2. IXTH30N50L-VB
IXTH30N50L-VB is a high-voltage N-channel MOSFET in a TO-247 package that supports up to 500V drain-source voltage (VDS) and 40A drain current (ID). The device has an on-resistance (RDS(ON)) of 80mΩ and performs well at a 10V gate drive. It uses Super Junction (SJ) and Multi-EPI technology to optimize its efficiency and switching performance at high voltage and high frequency. This MOSFET is particularly suitable for high-power, high-voltage applications, providing higher power conversion efficiency and lower power consumption.
**2. IXTH30N50L-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI technology
- **Gate charge (Qg)**: Typical value is 120nC @ VGS = 10V
- **Switching time**: Fast switching capability and low switching loss
- **Power dissipation**: 460W (typical value)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: 0.32°C/W typical
The device is designed to optimize high voltage, high efficiency power switching applications, providing excellent performance and reliability.
**Three,
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI technology
- **Gate charge (Qg)**: Typical value is 120nC @ VGS = 10V
- **Switching time**: Fast switching capability and low switching loss
- **Power dissipation**: 460W (typical value)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: 0.32°C/W typical
The device is designed to optimize high voltage, high efficiency power switching applications, providing excellent performance and reliability.
**Three,
Domain and module applications：
**
IXTH30N50L-VB MOSFET is suitable for multiple industrial and high-voltage applications due to its high voltage, low on-resistance and excellent power handling capabilities:
1. **Power Conversion System**: IXTH30N50L-VB performs well in high-voltage DC-DC converters and switch mode power supplies (SMPS), capable of handling high power loads, ensuring high efficiency and low losses during power conversion. It is particularly suitable for industrial power supplies and data center power management modules.
2. **Photovoltaic (PV) Inverter and Wind Power Generation System**: This MOSFET is suitable for PV inverters and wind energy conversion systems, which usually need to handle high voltage and high power. The device can effectively improve energy conversion efficiency and reduce system heat.
3. **Motor Drive System**: IXTH30N50L-VB can provide reliable and efficient control in motor control and drives, especially high-voltage industrial motors and variable frequency drives, and reduce power consumption in drive systems.
4. **Uninterruptible Power Supply (UPS) System**: This device is commonly used in UPS systems to ensure rapid switching to backup power in the event of a power failure and provide stable and reliable power output. It is suitable for power management applications that require high reliability.
5. **High Voltage Frequency Converter (VFD)**: This MOSFET is used in industrial frequency converters for motor speed regulation and energy-saving control. Its high voltage and high efficiency make it particularly suitable for use in complex industrial automation control equipment.
The IXTH30N50L-VB is an ideal choice for high-voltage, high-power applications, which can reduce power loss while improving system reliability and efficiency.
IXTH30N50L-VB MOSFET is suitable for multiple industrial and high-voltage applications due to its high voltage, low on-resistance and excellent power handling capabilities:
1. **Power Conversion System**: IXTH30N50L-VB performs well in high-voltage DC-DC converters and switch mode power supplies (SMPS), capable of handling high power loads, ensuring high efficiency and low losses during power conversion. It is particularly suitable for industrial power supplies and data center power management modules.
2. **Photovoltaic (PV) Inverter and Wind Power Generation System**: This MOSFET is suitable for PV inverters and wind energy conversion systems, which usually need to handle high voltage and high power. The device can effectively improve energy conversion efficiency and reduce system heat.
3. **Motor Drive System**: IXTH30N50L-VB can provide reliable and efficient control in motor control and drives, especially high-voltage industrial motors and variable frequency drives, and reduce power consumption in drive systems.
4. **Uninterruptible Power Supply (UPS) System**: This device is commonly used in UPS systems to ensure rapid switching to backup power in the event of a power failure and provide stable and reliable power output. It is suitable for power management applications that require high reliability.
5. **High Voltage Frequency Converter (VFD)**: This MOSFET is used in industrial frequency converters for motor speed regulation and energy-saving control. Its high voltage and high efficiency make it particularly suitable for use in complex industrial automation control equipment.
The IXTH30N50L-VB is an ideal choice for high-voltage, high-power applications, which can reduce power loss while improving system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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