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IXTH30N50L2-VB Product details
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IXTH30N50L2-VB Product Introduction
The IXTH30N50L2-VB is a high voltage single N-channel MOSFET in a TO247 package capable of handling voltages up to 500V. With its SJ (Super Junction) and Multi-EPI technologies, the IXTH30N50L2-VB has excellent switching performance and low conduction losses, making it suitable for applications with high power density and high efficiency requirements. The device supports up to 40A of continuous current and is suitable for a wide range of industrial and power conversion systems.
The IXTH30N50L2-VB is a high voltage single N-channel MOSFET in a TO247 package capable of handling voltages up to 500V. With its SJ (Super Junction) and Multi-EPI technologies, the IXTH30N50L2-VB has excellent switching performance and low conduction losses, making it suitable for applications with high power density and high efficiency requirements. The device supports up to 40A of continuous current and is suitable for a wide range of industrial and power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH30N50L2-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ (Super Junction) and Multi-EPI technology
- **Model**: IXTH30N50L2-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ (Super Junction) and Multi-EPI technology
Domain and module applications：
Applications and modules
1. **Industrial power conversion**: The IXTH30N50L2-VB is ideal for industrial-grade high-voltage DC-DC converters, AC-DC power modules, and power inverters. Its high voltage withstand capability and low on-resistance make it an excellent performer in power conversion systems that require high efficiency.
2. **Electric vehicles and fast charging systems**: In high-voltage applications in electric vehicles, such as fast charging piles and on-board power systems, this MOSFET ensures efficient power conversion, reduces power losses, and improves charging efficiency.
3. **Renewable energy systems**: In solar inverters and wind energy conversion systems, the IXTH30N50L2-VB can be used for high-voltage energy conversion and power transmission, supporting stable output, and reducing energy losses, improving the overall efficiency of the system.
4. **Uninterruptible power supply (UPS)**: In high-power uninterruptible power supply equipment, the device is used to ensure efficient and reliable power switching and maintain system stability, especially for industrial and enterprise-level equipment.
5. **Smart Grid and Power System**: In smart grid and other power systems, the high voltage and high-efficiency switching characteristics of IXTH30N50L2-VB can help achieve efficient power distribution and conversion, suitable for applications in substations and power management equipment.
By combining its super junction and Multi-EPI technologies, IXTH30N50L2-VB provides efficient power management and high voltage application solutions, which is very suitable for high-power applications in multiple fields such as industry, renewable energy and electric vehicles.
1. **Industrial power conversion**: The IXTH30N50L2-VB is ideal for industrial-grade high-voltage DC-DC converters, AC-DC power modules, and power inverters. Its high voltage withstand capability and low on-resistance make it an excellent performer in power conversion systems that require high efficiency.
2. **Electric vehicles and fast charging systems**: In high-voltage applications in electric vehicles, such as fast charging piles and on-board power systems, this MOSFET ensures efficient power conversion, reduces power losses, and improves charging efficiency.
3. **Renewable energy systems**: In solar inverters and wind energy conversion systems, the IXTH30N50L2-VB can be used for high-voltage energy conversion and power transmission, supporting stable output, and reducing energy losses, improving the overall efficiency of the system.
4. **Uninterruptible power supply (UPS)**: In high-power uninterruptible power supply equipment, the device is used to ensure efficient and reliable power switching and maintain system stability, especially for industrial and enterprise-level equipment.
5. **Smart Grid and Power System**: In smart grid and other power systems, the high voltage and high-efficiency switching characteristics of IXTH30N50L2-VB can help achieve efficient power distribution and conversion, suitable for applications in substations and power management equipment.
By combining its super junction and Multi-EPI technologies, IXTH30N50L2-VB provides efficient power management and high voltage application solutions, which is very suitable for high-power applications in multiple fields such as industry, renewable energy and electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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