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IXTH28N50Q-VB Product details

Product introduction:

IXTH28N50Q-VB Product Introduction

The IXTH28N50Q-VB is a high-voltage N-Channel MOSFET in a TO247 package, designed for high-efficiency and high-voltage applications. With a maximum drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, the device can withstand high voltage and current loads. Its on-resistance (RDS(ON)) is 80mΩ@VGS=10V, ensuring efficient current transfer and low losses. Based on SJ_Multi-EPI technology, this product is suitable for applications such as high-voltage power conversion, motor drive, and industrial control, with excellent durability and switching performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description

- **Model**: IXTH28N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI technology

Domain and module applications:

Application fields and module examples

1. **Switching Power Supply (SMPS)**: The IXTH28N50Q-VB is suitable for efficient switching power supply systems, especially under high voltage conditions, the MOSFET can provide stable current transmission and reduce energy loss. Its high voltage and current handling capabilities make it an ideal choice for industrial equipment and data center power modules.

2. **Motor Drive**: In high-power motor control systems, the device can be used to drive motors to ensure stability and reliability under high voltage and high current environments, suitable for industrial automation equipment and large mechanical equipment.

3. **Photovoltaic Inverter and Wind Energy Conversion**: In solar photovoltaic inverters and wind energy conversion systems, the IXTH28N50Q-VB provides efficient power conversion, can handle the conversion from high voltage DC to AC, improve energy utilization efficiency, and is widely used in the field of renewable energy.

4. **Battery Management System (BMS)**: This MOSFET is also suitable for high-voltage battery management systems. In electric vehicles and energy storage systems, it can ensure the safety and reliability of batteries during charging and discharging, and extend the battery life.

5. **High-voltage Power Electronics**: In various high-voltage power electronic devices such as UPS, uninterruptible power supplies and power converters, the IXTH28N50Q-VB can provide efficient switching operations to ensure system stability and high efficiency during high-power operations.

The high-voltage withstand capability, low on-resistance and high current handling capability of the IXTH28N50Q-VB make it an ideal choice for power conversion and management applications, especially in areas that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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