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IXTH26P20P-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXTH26P20P-VB is a high-performance P-channel MOSFET in TO-247 package with excellent on-resistance characteristics and high current handling capability. This device has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, ensuring its reliability and stability in various application scenarios. Thanks to the advanced trench technology, it exhibits excellent conduction characteristics at lower gate drive voltages, suitable for power switching applications requiring high efficiency.
IXTH26P20P-VB is a high-performance P-channel MOSFET in TO-247 package with excellent on-resistance characteristics and high current handling capability. This device has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, ensuring its reliability and stability in various application scenarios. Thanks to the advanced trench technology, it exhibits excellent conduction characteristics at lower gate drive voltages, suitable for power switching applications requiring high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-P |
2. Detailed parameter description:
- **Package type**: TO-247
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Drain current (ID)**: -21A
- **Technology type**: Trench
- **Package type**: TO-247
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Drain current (ID)**: -21A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples:
1. **Power management system**:
IXTH26P20P-VB is commonly used in load switches and DC-DC converter modules in the field of power management. Its high withstand voltage and low on-resistance enable it to effectively reduce power consumption in power distribution and load control applications.
2. **Power tools and motor drives**:
Due to its high current carrying capacity and low on-resistance, this MOSFET is very suitable for high-power applications such as power tools, motor control and servo drives, enabling efficient power management and control.
3. **Inverter and frequency converter**:
In inverter and frequency converter applications, IXTH26P20P-VB can be used as the main switching element, which helps to improve the system's conversion efficiency and reduce power consumption. It is suitable for energy conversion modules in renewable energy power generation systems.
4. **Battery Management System (BMS)**:
The device also has wide applications in battery protection circuits, especially in lithium-ion batteries and other high-energy storage devices, providing reliable over-current protection and load switching functions.
Through these examples, the IXTH26P20P-VB shows its applicability in multiple fields and application modules, especially in the needs of efficient, low-loss power management and conversion.
1. **Power management system**:
IXTH26P20P-VB is commonly used in load switches and DC-DC converter modules in the field of power management. Its high withstand voltage and low on-resistance enable it to effectively reduce power consumption in power distribution and load control applications.
2. **Power tools and motor drives**:
Due to its high current carrying capacity and low on-resistance, this MOSFET is very suitable for high-power applications such as power tools, motor control and servo drives, enabling efficient power management and control.
3. **Inverter and frequency converter**:
In inverter and frequency converter applications, IXTH26P20P-VB can be used as the main switching element, which helps to improve the system's conversion efficiency and reduce power consumption. It is suitable for energy conversion modules in renewable energy power generation systems.
4. **Battery Management System (BMS)**:
The device also has wide applications in battery protection circuits, especially in lithium-ion batteries and other high-energy storage devices, providing reliable over-current protection and load switching functions.
Through these examples, the IXTH26P20P-VB shows its applicability in multiple fields and application modules, especially in the needs of efficient, low-loss power management and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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