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IXTH26N60P-VB Product details
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Product Introduction
**IXTH26N60P-VB** is a high-performance N-channel MOSFET designed with a TO247 package and a 650V withstand voltage, suitable for high-voltage applications. This model is designed for circuits that require high voltage tolerance and stable performance. It has an on-resistance of 160mΩ (RDS(ON) @ VGS=10V), ensuring high-efficiency operation under medium current conditions. Its threshold voltage (Vth) is 3.5V, supports a gate-source voltage of ±30V, and uses advanced SJ_Multi-EPI technology to provide excellent electrical performance and reliability. It is widely used in various power electronic devices.
**IXTH26N60P-VB** is a high-performance N-channel MOSFET designed with a TO247 package and a 650V withstand voltage, suitable for high-voltage applications. This model is designed for circuits that require high voltage tolerance and stable performance. It has an on-resistance of 160mΩ (RDS(ON) @ VGS=10V), ensuring high-efficiency operation under medium current conditions. Its threshold voltage (Vth) is 3.5V, supports a gate-source voltage of ±30V, and uses advanced SJ_Multi-EPI technology to provide excellent electrical performance and reliability. It is widely used in various power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH26N60P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH26N60P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power converter**: IXTH26N60P-VB is suitable for high-voltage switching power supplies (SMPS) and DC-DC converters (DC-DC). It performs well in applications that require high withstand voltage and medium current, effectively improving system efficiency and stability.
2. **Industrial automation**: This MOSFET can be used in motor drive and power management modules in industrial control systems. It can handle high voltage requirements and ensure reliable operation of equipment in high-voltage environments.
3. **Electric vehicles**: In the electronic control systems of electric bicycles, electric motorcycles and other vehicles, IXTH26N60P-VB provides stable current management and efficient energy conversion, improving overall performance and endurance.
4. **Inverter**: It is suitable for solar photovoltaic inverters and wind power inverters. It can withstand high voltage input and ensure power conversion efficiency and system reliability during the inverter process.
5. **Consumer electronics**: In high-power LED drivers, power management modules, and audio amplifiers, the IXTH26N60P-VB achieves efficient energy conversion and stable power supply through its low on-resistance and high withstand voltage characteristics.
From the above application examples, it can be seen that the **IXTH26N60P-VB** has demonstrated its excellent performance and wide applicability in a variety of electronic devices and systems that require high withstand voltage and medium current, and is an ideal choice for power management and high-voltage applications.
1. **Power converter**: IXTH26N60P-VB is suitable for high-voltage switching power supplies (SMPS) and DC-DC converters (DC-DC). It performs well in applications that require high withstand voltage and medium current, effectively improving system efficiency and stability.
2. **Industrial automation**: This MOSFET can be used in motor drive and power management modules in industrial control systems. It can handle high voltage requirements and ensure reliable operation of equipment in high-voltage environments.
3. **Electric vehicles**: In the electronic control systems of electric bicycles, electric motorcycles and other vehicles, IXTH26N60P-VB provides stable current management and efficient energy conversion, improving overall performance and endurance.
4. **Inverter**: It is suitable for solar photovoltaic inverters and wind power inverters. It can withstand high voltage input and ensure power conversion efficiency and system reliability during the inverter process.
5. **Consumer electronics**: In high-power LED drivers, power management modules, and audio amplifiers, the IXTH26N60P-VB achieves efficient energy conversion and stable power supply through its low on-resistance and high withstand voltage characteristics.
From the above application examples, it can be seen that the **IXTH26N60P-VB** has demonstrated its excellent performance and wide applicability in a variety of electronic devices and systems that require high withstand voltage and medium current, and is an ideal choice for power management and high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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