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IXTH24P20-VB Product details
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Product Introduction
**IXTH24P20-VB** is a single P-channel MOSFET in TO247 package, suitable for high-efficiency power management and high-voltage switching applications. With a maximum drain-source voltage of -100V and low on-resistance, the device is suitable for applications requiring high current switching. Designed with Trench technology, the IXTH24P20-VB has lower conduction losses and excellent thermal performance, making it ideal for working in harsh environments.
**IXTH24P20-VB** is a single P-channel MOSFET in TO247 package, suitable for high-efficiency power management and high-voltage switching applications. With a maximum drain-source voltage of -100V and low on-resistance, the device is suitable for applications requiring high current switching. Designed with Trench technology, the IXTH24P20-VB has lower conduction losses and excellent thermal performance, making it ideal for working in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-P |
Detailed parameter description
- **Model**: IXTH24P20-VB
- **Package type**: TO247
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Maximum drain current (ID)**: -21A
- **Technology**: Trench
- **Model**: IXTH24P20-VB
- **Package type**: TO247
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Maximum drain current (ID)**: -21A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Battery Management System (BMS)**: The IXTH24P20-VB is well suited for battery management systems, especially reverse protection circuits and load switches in high-power battery packs. In these applications, the P-channel MOSFET can simplify circuit design and reduce complexity.
2. **Power Management and Reverse Current Protection**: In power management modules, this MOSFET can be used in reverse current protection circuits to prevent excessive discharge of batteries or power supplies. Its low on-resistance helps reduce power consumption and improve overall system efficiency.
3. **DC-DC Converters**: The IXTH24P20-VB can be used in DC-DC converters that require efficient switching, especially in medium voltage conversion applications, to improve energy efficiency by reducing conduction losses.
4. **Power Tools and Industrial Control**: In power tools and industrial equipment, P-channel MOSFETs can be used to implement power switching control or power regulation to ensure stable operation of the equipment under high current conditions.
5. **Renewable Energy Systems**: This device is suitable for power conversion modules in solar and wind energy systems, which can help improve energy conversion efficiency and optimize system performance, especially in scenarios involving high power and high current.
With its reliability and high performance, the IXTH24P20-VB has a wide range of applicability in applications that require efficient power switching and reverse current protection.
1. **Battery Management System (BMS)**: The IXTH24P20-VB is well suited for battery management systems, especially reverse protection circuits and load switches in high-power battery packs. In these applications, the P-channel MOSFET can simplify circuit design and reduce complexity.
2. **Power Management and Reverse Current Protection**: In power management modules, this MOSFET can be used in reverse current protection circuits to prevent excessive discharge of batteries or power supplies. Its low on-resistance helps reduce power consumption and improve overall system efficiency.
3. **DC-DC Converters**: The IXTH24P20-VB can be used in DC-DC converters that require efficient switching, especially in medium voltage conversion applications, to improve energy efficiency by reducing conduction losses.
4. **Power Tools and Industrial Control**: In power tools and industrial equipment, P-channel MOSFETs can be used to implement power switching control or power regulation to ensure stable operation of the equipment under high current conditions.
5. **Renewable Energy Systems**: This device is suitable for power conversion modules in solar and wind energy systems, which can help improve energy conversion efficiency and optimize system performance, especially in scenarios involving high power and high current.
With its reliability and high performance, the IXTH24P20-VB has a wide range of applicability in applications that require efficient power switching and reverse current protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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