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IXTH24N50-VB Product details
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Product Introduction: IXTH24N50-VB
IXTH24N50-VB is a high voltage N-channel MOSFET in TO247 package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) of 500V and a drain current (ID) capability of 40A, and uses advanced SJ_Multi-EPI technology to achieve lower on-resistance and high efficiency switching characteristics. This device is particularly suitable for applications that need to handle high power and high voltage, such as power conversion and industrial control systems.
IXTH24N50-VB is a high voltage N-channel MOSFET in TO247 package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) of 500V and a drain current (ID) capability of 40A, and uses advanced SJ_Multi-EPI technology to achieve lower on-resistance and high efficiency switching characteristics. This device is particularly suitable for applications that need to handle high power and high voltage, such as power conversion and industrial control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXTH24N50-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial technology)
- **Model**: IXTH24N50-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial technology)
Domain and module applications：
Applications and module examples:
1. **High-voltage power conversion**:
- The IXTH24N50-VB is ideal for use in high-voltage switching power supplies, inverters, and DC-AC converters. Its high withstand voltage of 500V enables handling of higher input voltages in power systems, while its low on-resistance of 80mΩ ensures efficient energy conversion and reduces energy losses.
2. **Solar inverter**:
- In solar inverters for photovoltaic power generation, this MOSFET is used to convert DC power into AC power. Its high voltage handling capability enables it to withstand the higher voltages generated by solar panels while providing reliable switching performance to improve overall power generation efficiency.
3. **Industrial motor drive**:
- The IXTH24N50-VB is an ideal choice for industrial applications that require control of high-power motors. Its high current and high voltage handling capabilities ensure that the motor controller can operate stably under harsh conditions with excellent response speed and switching characteristics.
4. **Uninterruptible Power Supply (UPS)**:
- This device is suitable for use in uninterruptible power supply equipment (UPS) to handle high current and voltage conversion in emergency situations. It can provide stable power conversion and fast response time to ensure that the equipment continues to work during power fluctuations or failures.
In short, IXTH24N50-VB is widely used in high-voltage power systems and high-efficiency power electronic devices due to its high withstand voltage, low on-resistance and excellent switching performance, becoming an important part of high-power design.
1. **High-voltage power conversion**:
- The IXTH24N50-VB is ideal for use in high-voltage switching power supplies, inverters, and DC-AC converters. Its high withstand voltage of 500V enables handling of higher input voltages in power systems, while its low on-resistance of 80mΩ ensures efficient energy conversion and reduces energy losses.
2. **Solar inverter**:
- In solar inverters for photovoltaic power generation, this MOSFET is used to convert DC power into AC power. Its high voltage handling capability enables it to withstand the higher voltages generated by solar panels while providing reliable switching performance to improve overall power generation efficiency.
3. **Industrial motor drive**:
- The IXTH24N50-VB is an ideal choice for industrial applications that require control of high-power motors. Its high current and high voltage handling capabilities ensure that the motor controller can operate stably under harsh conditions with excellent response speed and switching characteristics.
4. **Uninterruptible Power Supply (UPS)**:
- This device is suitable for use in uninterruptible power supply equipment (UPS) to handle high current and voltage conversion in emergency situations. It can provide stable power conversion and fast response time to ensure that the equipment continues to work during power fluctuations or failures.
In short, IXTH24N50-VB is widely used in high-voltage power systems and high-efficiency power electronic devices due to its high withstand voltage, low on-resistance and excellent switching performance, becoming an important part of high-power design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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