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IXTH24N50L-VB Product details

Product introduction:

**
IXTH24N50L-VB is a high-voltage N-channel power MOSFET in a TO-247 package with a drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A. Its on-resistance (RDS(ON)) is 80mΩ, which can still provide low conduction losses under high voltage. This MOSFET adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, with excellent switching performance and efficient power handling capability, especially suitable for high-voltage and high-power applications, ensuring high efficiency and stability under high voltage conditions.

** 2. IXTH24N50L-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
**
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Superjunction (SJ) Multi-EPI technology
- **Switching times**: Fast switching characteristics, low gate charge
- **Power dissipation**: Typical 460W
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: Typical 0.32°C/W (junction to case)

This device is particularly suitable for applications that require high voltage, high current handling capability and low switching losses.

**Three,

Domain and module applications:

**
The high voltage and high current handling capabilities of the IXTH24N50L-VB MOSFET make it ideal for the following fields and module applications:

1. **Industrial Power Converters**: This MOSFET performs well in high-power switch-mode power supplies (SMPS) and high-voltage DC-DC converters, enabling efficient energy conversion in high-voltage environments and significantly reducing switching losses.

2. **Motor Control and Drives**: In industrial and commercial motor drives that need to handle high voltages and high currents, the device ensures stability and efficiency, especially for industrial automation and high-voltage motor control systems.

3. **Photovoltaic (PV) Inverters and Wind Power Systems**: In renewable energy applications, such as inverters for photovoltaic systems and wind energy conversion equipment, the high voltage characteristics of the IXTH24N50L-VB can cope with the high power requirements of these systems and provide reliable power conversion.

4. **UPS (Uninterruptible Power Supply) and Power Management**: In UPS systems that require high reliability, this MOSFET can be used in efficient power conversion modules, especially in critical situations such as emergency power supply or backup power supply, to ensure stable operation of the system.

5. **High-voltage inverter**: Suitable for variable-frequency control systems, especially those that need to handle high voltages, such as inverters in industrial control, heating and air-conditioning equipment, this MOSFET can maintain low energy losses in high-frequency switching applications.

By adopting super junction (SJ) technology, the IXTH24N50L-VB can effectively reduce power losses and improve overall system efficiency in high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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